TRTANSITION FROM BIEXCITONS TO ELECTRON-HOLE PLASMA IN PHOTOLUMINESCENCE PROPERTIES OF A GaAs/AlAs MULTIPLE-QUANTUM-WELL STRUCTURE

2001 ◽  
Author(s):  
H. ICHIDA ◽  
K. TSUJI ◽  
K. MIZOGUCHI ◽  
H. NISHIMURA ◽  
M. NAKAYAMA
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma

Cooling of an electron-hole plasma in aGa0.47In0.53As multiple-quantum-well structure

1987 ◽  
Vol 36 (2) ◽  
pp. 1136-1139 ◽  
Author(s):  
H. Lobentanzer ◽  
H. -J. Polland ◽  
W. W. Rühle ◽  
W. Stolz ◽  
K. Ploog
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma

TRANSITION FROM BIEXCITONS TO ELECTRON-HOLE PLASMA IN PHOTOLUMINESCENCE PROPERTIES OF A GaAs/AlAs MULTIPLE-QUANTUM-WELL STRUCTURE

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3793-3796 ◽  
Author(s):  
H. ICHIDA ◽  
K. TSUJI ◽  
K. MIZOGUCHI ◽  
H. NISHIMURA ◽  
M. NAKAYAMA
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Excitation Power ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma ◽  
Biexciton Binding Energy ◽  
Excitation Conditions

We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. we have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.

Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L427-L429 ◽  
Author(s):  
Shosaku Tanaka ◽  
Masaaki Kuno ◽  
Atsuya Yamamoto ◽  
Hiroshi Kobayashi ◽  
Masashi Mizuta ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma

Picosecond luminescence spectroscopy of electron-hole plasma in GaAs/AlAs quantum well structure

1984 ◽  
Vol 31-32 ◽  
pp. 400-402
Author(s):  
Shosaku Tanaka ◽  
Masaaki Kuno ◽  
Atsuya Yamamoto ◽  
Akira Watanabe ◽  
Hiroshi Kobayashi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Luminescence Spectroscopy ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma

TIME-RESOLVED RAMAN STUDIES OF NON-EQUILIBRIUM EXCITATIONS IN GaAs-AlAs AND GaAs-AlxGa1−xAs MULTIPLE QUANTUM WELL STRUCTURES

1992 ◽  
Vol 06 (12) ◽  
pp. 703-716 ◽  
Author(s):  
K. T. TSEN
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Carrier Dynamics ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Hot Carrier ◽  
Electron Hole Plasma

Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.

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