Exploring formation rationale of skin-core heterogeneity during PVA solutions evaporation by laser-induced fluorescence analysis

Polymer ◽  
2021 ◽  
pp. 123759
Author(s):  
Chen-xi Li ◽  
Hong Chen ◽  
Zhen-zhen Fu ◽  
Qin Zhang ◽  
Ke Wang ◽  
...  
2005 ◽  
Vol 26 (13) ◽  
pp. 2599-2607 ◽  
Author(s):  
Michaela Wirtz ◽  
Claus A. Schumann ◽  
Marc Schellenträger ◽  
Siegmar Gäb ◽  
Jochen vom Brocke ◽  
...  

1981 ◽  
Vol 85 (15) ◽  
pp. 2180-2182 ◽  
Author(s):  
T. J. Whitaker ◽  
B. A. Bushaw

APL Materials ◽  
2016 ◽  
Vol 4 (12) ◽  
pp. 126102 ◽  
Author(s):  
Kasper Orsel ◽  
Rik Groenen ◽  
Bert Bastiaens ◽  
Gertjan Koster ◽  
Guus Rijnders ◽  
...  

1988 ◽  
Vol 129 ◽  
Author(s):  
Masahiro Kawasaki ◽  
Hiroyasu Sato ◽  
Gen Inoue

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.


Sign in / Sign up

Export Citation Format

Share Document