a-Type edge dislocation mobility in wurtzite GaN using molecular dynamics

2013 ◽  
Vol 69 (4) ◽  
pp. 311-314 ◽  
Author(s):  
N. Scott Weingarten ◽  
Peter W. Chung
1994 ◽  
Vol 356 ◽  
Author(s):  
N. Tajima ◽  
T. Nozaki ◽  
T. Hirade ◽  
Y. Kogure ◽  
Masao Doyama

AbstractComplete and dissociated edge dislocations were created near the center of the surface (101) of aluminum small crystals whose surfaces are (111), (111), (101), (101). (121) and (121). Molecular dynamics with N-body embedded atom potentials were used. Higher stress is needed to create a complete edge dislocation than to create a dissociated dislocation.


2011 ◽  
Vol 84 (6) ◽  
Author(s):  
S. Queyreau ◽  
J. Marian ◽  
M. R. Gilbert ◽  
B. D. Wirth

2015 ◽  
Vol 465 ◽  
pp. 301-310 ◽  
Author(s):  
Jean-Baptiste Baudouin ◽  
Akiyoshi Nomoto ◽  
Michel Perez ◽  
Ghiath Monnet ◽  
Christophe Domain

Author(s):  
Irina V. Zorya ◽  
Gennady M. Poletaev ◽  
Mikhail D. Starostenkov

The energy characteristics of interaction of hydrogen impurity with ½<110> edge dislocation in Pd and Ni were calculated by the method of molecular dynamics. It is shown that the dislocation is effective trap for hydrogen. At the same time the dislocation jogs increases its sorption capacity with respect to hydrogen, but reduces the diffusion mobility of hydrogen along the dislocation. The diffusion of hydrogen atoms in the dislocation region occurs mainly along the dislocation core. The energy of hydrogen migration along the dislocation, as our calculations have shown, is almost two times lower than in a defect-free crystal.


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