Electrical properties, defect chemistry and local lattice relaxation in Nb2O5 modified 0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3 ferroelectrics

2018 ◽  
Vol 156 ◽  
pp. 32-36 ◽  
Author(s):  
Haiwu Zhang ◽  
Hong Yan ◽  
Xiaobing Li ◽  
Haosu Luo
Keyword(s):  
Electrical Properties ◽  
Lattice Relaxation ◽  
Defect Chemistry ◽  
Local Lattice

Site Redistribution, Partial Frozen-in Defect Chemistry, and Electrical Properties of Ba1–x(Zr,Pr)O3−δ

2016 ◽  
Vol 55 (17) ◽  
pp. 8552-8563 ◽  
Author(s):  
Isabel Antunes ◽  
Sergey Mikhalev ◽  
Glenn Christopher Mather ◽  
Vladislav Vadimovich Kharton ◽  
Fábio Gabriel Figueiras ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry

Defect Chemistry and Electrical Properties of Iron-pyrite (FeS2–x)

1992 ◽  
pp. 87-92 ◽  
Author(s):  
S. Fiechter ◽  
A. Hartmann ◽  
P. Dulski ◽  
D. Jokisch ◽  
H. Tributsch
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry ◽  
Iron Pyrite

Local lattice relaxation around Tl substitutional impurities in a NaI(Tl) scintillator crystal

2020 ◽  
Vol 177 ◽  
pp. 108992
Author(s):  
A. Filipponi ◽  
G. Profeta ◽  
N. Di Marco ◽  
V. Zema ◽  
K. Schäffner ◽  
...  
Keyword(s):  
Lattice Relaxation ◽  
Local Lattice ◽  
Substitutional Impurities ◽  
Scintillator Crystal

BN/NiO nanocomposites: Structural, defect chemistry and electrical properties in hydrogen gas atmosphere

2020 ◽  
Vol 46 (16) ◽  
pp. 26233-26237
Author(s):  
Kulwinder Singh ◽  
Manjot Kaur ◽  
Ishant Chauhan ◽  
Amit Awasthi ◽  
Manjeet Kumar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural Defect ◽  
Defect Chemistry ◽  
Hydrogen Gas ◽  
Gas Atmosphere

scholarly journals Electrical properties and defect chemistry of indium-doped TiO2. Thermoelectric power

Ionics ◽  
2014 ◽  
Vol 21 (7) ◽  
pp. 2019-2029 ◽  
Author(s):  
Janusz Nowotny ◽  
Mohammad A. Alim ◽  
Tadeusz Bak ◽  
Armand J. Atanacio ◽  
Anam Malik
Keyword(s):  
Electrical Properties ◽  
Thermoelectric Power ◽  
Defect Chemistry ◽  
Doped Tio2

Variation of electrical properties in thickening Al-doped ZnO films: role of defect chemistry

RSC Advances ◽  
2016 ◽  
Vol 6 (54) ◽  
pp. 48910-48918 ◽  
Author(s):  
Chetan Singh ◽  
Emila Panda
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry ◽  
Zno Films ◽  
Doped Zno

This study addresses the variation in electrical properties in a thickening Al-doped ZnO (AZO) film up to 348 nm and correlates this with its defect chemistry.

SUPERPOSITION MODEL ANALYSIS FOR THE ZERO-FIELD SPLITTING OFMn2+IN SOME CRYSTALS

2006 ◽  
Vol 20 (30) ◽  
pp. 1917-1922 ◽  
Author(s):  
VIMAL KUMAR JAIN
Keyword(s):  
Lattice Relaxation ◽  
Zero Field ◽  
Superposition Model ◽  
Zero Field Splitting ◽  
Intrinsic Parameter ◽  
Order Zero ◽  
Field Splitting ◽  
Zero Field Splitting Parameter ◽  
Local Lattice ◽  
Splitting Parameter

The Newman superposition model has been applied to second-order zero-field splitting parameter [Formula: see text] taken from the literature for Mn2+in Hg(ClO4)2· 6 H2O , M ″ SiF6·6 H2O (M ″= Fe, Co, Zn ) and M ″ NbOF5·6 H2O (M ″= Co, Zn ). In the calculations, the local lattice relaxation has been taken into account. It is shown that nearly the same value of intrinsic parameter b2=-0.057(8) cm-1is obtained.

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