scholarly journals An experimentally-based molecular dynamics analysis of grain boundary migration during recrystallization in aluminum

2022 ◽  
pp. 114489
Author(s):  
Runguang Li ◽  
Eric R. Homer ◽  
Chuanshi Hong ◽  
Yubin Zhang ◽  
Dorte Juul Jensen
1991 ◽  
Vol 6 (11) ◽  
pp. 2291-2304 ◽  
Author(s):  
J.M. Rickman ◽  
S.R. Phillpot ◽  
D. Wolf ◽  
D.L. Woodraska ◽  
S. Yip

The migration of a (100) θ = 43.6°(Σ29) twist grain boundary is observed during the course of a molecular-dynamics simulation. The atomic-level details of the migration are investigated by determining the time dependence of the planar structure factor, a function of the planar interparticle bond angles, and the location of the center of a mass of planes near the grain boundary. It is found that a migration step consists of local bond rearrangements which, when the simulation cell is made large enough, produce domain-like structures in the migrating plane. Although no overall sliding is observed during migration, a local sliding of the planes near the migrating grain boundary accompanies the migration process. It is suggested that a three-dimensional cloud of thermally produced Frenkel-like point defects near the boundary accompanies, and facilitates, its migration.


1990 ◽  
Vol 193 ◽  
Author(s):  
J. M. Rickman ◽  
S. R. Phillpot ◽  
D. Wolf

ABSTRACTThe migration of a (100) Θ = 43.6° (Σ29) twist grain boundary is observed during the course of a molecular-dynamics (MD) simulation. The migration is investigated by calculating changes in the planar structure factor Sp(k), the orientation of interparticle bonds in the migrating plane, and the motion of the center of mass of planes near the grain boundary. It is found that (a) migration is accompanied by sliding, and (b) each migration step consists of a series of local bond rearrangements. It appears that, as a precursor to migration, Frenkel-like defects are produced at the grain boundary.


2004 ◽  
Vol 449-452 ◽  
pp. 89-92 ◽  
Author(s):  
Jang Hyuk Yoon ◽  
Seong Jin Kim ◽  
Ho Jang

Molecular dynamics (MD) simulation was performed to study the stress induced grain boundary migration caused by the interaction of dislocations with a grain boundary. The simulation was carried out in a Ni block (295020 atoms) with a Σ = 5 (210) grain boundary and an embedded atom potential for Ni was used for the MD calculation. Stress was provided by indenting a diamond indenter and the interaction between Ni surface and diamond indenter was assumed to have a fully repulsive force to emulate a traction free surface. Results showed that the indentation nucleated perfect dislocations and the dislocations produced stacking faults in the form of a parallelepiped tube. The parallelepiped tube was comprised of four {111} slip planes and it contained two pairs of parallel dislocations with Shockley partials. The dislocations propagated along the parallelepiped slip planes and fully merged onto the Σ = 5 (210) grain boundary without emitting a dislocation on the other grain. The interaction of the dislocations with the grain boundary induced the migration of the grain boundary plane in the direction normal to the boundary plane and the migration continued as long as the successive dislocations merged onto the grain boundary plane. The detailed mechanism of the conservative motion of atoms at the grain boundary was associated with the geometric feature of the Σ = 5 (210) grain boundary.


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