We introduce a pin-hole free CH3NH3PbI3−xClx perovskite layer by using heated airflow during the nucleation stage. We control the nucleation stage which gives a pin-hole free planar perovskite with large grains, resulting in a maximum power point (MPP) efficiency of 14.3% and a high efficiency of 19.0% with reproducibility.
Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.