Exciton transfer between localized states in ZnO quantum well structures

2007 ◽  
Vol 42 (1-6) ◽  
pp. 206-211 ◽  
Author(s):  
T. Makino ◽  
K. Saito ◽  
M. Kawasaki
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures ◽  
Exciton Transfer

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Magnetic field dependence of the exciton transfer in semimagnetic double quantum well structures

1994 ◽  
Vol 138 (1-4) ◽  
pp. 889-894 ◽  
Author(s):  
Th. Pier ◽  
K. Hieke ◽  
B. Henninger ◽  
W. Heimbrodt ◽  
O. Goede ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Double Quantum ◽  
Quantum Well Structures ◽  
Exciton Transfer ◽  
Double Quantum Well

Exciton transfer in quantum well structures

1992 ◽  
Vol 12 (3) ◽  
pp. 363-366 ◽  
Author(s):  
O. Goede ◽  
W. Heimbrodt ◽  
K. Hieke ◽  
H.-E. Gumlich ◽  
Th. Pier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Exciton Transfer

Time-resolved exciton transfer in GaAs/AlxGa1−xAs double-quantum-well structures

1992 ◽  
Vol 45 (20) ◽  
pp. 11782-11794 ◽  
Author(s):  
R. Ferreira ◽  
P. Rolland ◽  
Ph. Roussignol ◽  
C. Delalande ◽  
A. Vinattieri ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Exciton Transfer ◽  
Double Quantum Well

scholarly journals Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

2002 ◽  
Vol 92 (8) ◽  
pp. 4441-4448 ◽  
Author(s):  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
Yi-Yin Chung ◽  
C. C. Yang ◽  
Yen-Sheng Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures ◽  
Recombination Dynamics

Exciton transfer dynamics in CdTe/(Cd,Zn) Te asymmetric double quantum well structures

1994 ◽  
Vol 138 (1-4) ◽  
pp. 831-837 ◽  
Author(s):  
S. Haacke ◽  
N.T. Pelekanos ◽  
H. Mariette ◽  
A.P. Heberle ◽  
W.W. Rühle ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Quantum Well Structures ◽  
Exciton Transfer ◽  
Double Quantum Well

scholarly journals Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 92 (4) ◽  
pp. 761-764
Author(s):  
M. Godlewski ◽  
M. Surma ◽  
Z. Wilamowski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Exciton Transfer

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

2002 ◽  
Vol 80 (17) ◽  
pp. 3099-3101 ◽  
Author(s):  
M. E. Aumer ◽  
S. F. LeBoeuf ◽  
B. F. Moody ◽  
S. M. Bedair ◽  
K. Nam ◽  
...  
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Quantum Well Structures

scholarly journals Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1999 ◽  
Vol 4 (S1) ◽  
pp. 112-117 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

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