Electronic transport properties of metallic graphene nanoribbons with two vacancies

2010 ◽  
Vol 150 (29-30) ◽  
pp. 1308-1312 ◽  
Author(s):  
K.L. Ma ◽  
X.H. Yan ◽  
Y. Xiao ◽  
Y.P. Chen
2018 ◽  
Vol 35 (6) ◽  
pp. 067101
Author(s):  
Yang Liu ◽  
Cai-Juan Xia ◽  
Bo-Qun Zhang ◽  
Ting-Ting Zhang ◽  
Yan Cui ◽  
...  

2015 ◽  
Vol 1727 ◽  
Author(s):  
Yasutaka Nishida ◽  
Takashi Yoshida ◽  
Fumihiko Aiga ◽  
Yuichi Yamazaki ◽  
Hisao Miyazaki ◽  
...  

ABSTRACTIn this study, we investigated the influence of line defects consisting of pentagon-heptagon (5-7) pairs on the electronic transport properties of zigzag-edged and armchair-edged graphene nanoribbons (GNRs). Using the first-principles density functional theory, we study their electronic properties. To investigate their current-voltage (I-V) characteristics at low bias voltage (∼ 1 meV), we use the nonequilibrium Green’s function method. As a result, we found that the conductance of the GNRs having a connected line defect between source and drain shows better performance than that of the ideal zigzag-edged GNRs (ZGNRs). A detailed investigation of the transmission spectra and the wave function around the Fermi level reveals that the line defects arranged along the transport direction work similar to an edge state of the ZGNRs and can be an additional conduction channel. Our results suggest that such a line defect can be effective for low-resistance GNR interconnects.


2011 ◽  
Vol 27 (05) ◽  
pp. 1103-1107
Author(s):  
SUN Da-Li ◽  
◽  
PENG Sheng-Lin ◽  
OUYANG Jun ◽  
OUYANG Fang-Ping ◽  
...  

2011 ◽  
Vol 60 (10) ◽  
pp. 107302
Author(s):  
Ma Li ◽  
Tan Zhen-Bing ◽  
Tan Chang-Ling ◽  
Liu Guang-Tong ◽  
Yang Chang-Li ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C197-C197
Author(s):  
Katsunori Wakabayashi

The electronic states of graphene near the Fermi energy are well described by massless Dirac Fermion. The presence of edges, however, makes strong implications for the spectrum of the electrons. In graphene nanoribbons with zigzag edges, localized states appear at the edge with energies close to the Fermi level. In contrast, edge states are absent for ribbons with armchair edges. In my talk, we focus on edge and nanoscale effect on the electronic properties of graphene nanoribbons. We discuss the following aspects of graphene nanostructured systems. (1) In zigzag nanoribbons, for nonmagnetic long-ranged disorder, a single perfectly conducting channel emerges associated with a chiral mode due to the edge state, i.e., the absence of the localization in this class. (2) We show the electronic transport properties of graphene nanojunctions crucially depend on the peripheral lattice structures. The condition for electron confinement is discussed. (3) We will discuss the effect of edge chemical modification on magnetic properties of nanographene systems. Also, we discuss the hole doping effect on the spin-polarized states appearing along the graphene zigzag edges. Our studies reveal that the peculiar electronic, magnetic and transport properties of graphene nanostructured systems. In addition, we present our recent work on graphene double layer structure (GDLS), where two graphene layers are separated by a thin dielectric. We will discuss the dielectric environment effect on the charged-impurity-limited carrier mobility of the GDLS on the basis of the Boltzmann transport theory. It is found that carrier mobility strongly depends on the dielectric constant of the barrier layer if the interlayer distance becomes larger than the inverse of the Fermi wave vector. Our results suggest effective use of ultra-thin dielectric barriers and a practical design strategy to improve the charged-impurity-limited mobility of the GDLS.


2010 ◽  
Author(s):  
Katsunori Wakabayashi ◽  
Yositake Takane ◽  
Manfred Sigrist ◽  
Marília Caldas ◽  
Nelson Studart

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7368-7374 ◽  
Author(s):  
Xiaohui Jiang ◽  
Dongqing Zou ◽  
Bin Cui ◽  
Changfeng Fang ◽  
Wen Liu ◽  
...  

The spin-polarized electronic transport properties of zigzag graphene nanoribbons (ZGNRs) and boron nitride nanoribbons (ZBNNRs) heterojunctions with a boron vacancy are investigated under an external electric field.


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