Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
2006 ◽
Vol 50
(7-8)
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pp. 1337-1340
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2004 ◽
Vol 43
(4B)
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pp. 1713-1716
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1996 ◽
Vol 35
(Part 1, No. 2B)
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pp. 1428-1430
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2016 ◽
Keyword(s):
2007 ◽
Vol 28
(12)
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pp. 1102-1104
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Keyword(s):
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