Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

2006 ◽  
Vol 50 (7-8) ◽  
pp. 1337-1340 ◽  
Author(s):  
Shiyang Zhu ◽  
M.F. Li
1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1428-1430 ◽  
Author(s):  
Masaaki Onomura ◽  
Shinji Saito ◽  
John Rennie ◽  
Yukie Nishikawa ◽  
Peter J. Parbrook ◽  
...  

1995 ◽  
Author(s):  
M. Onomura ◽  
S. Saito ◽  
J. Rennie ◽  
Y. Nishikawa ◽  
P. J. Parbrook ◽  
...  

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