A novel synthesis method of carbide-derived carbon (CDC) in open air for hip implants

Author(s):  
Yani Sun ◽  
Kai-yuan Cheng ◽  
Mariusz Mika ◽  
Mathew Mathew ◽  
Michael McNallan
2018 ◽  
Vol 33 (8) ◽  
pp. 919 ◽  
Author(s):  
CHEN Jun ◽  
ZHAN Jing ◽  
DING Feng-Hua ◽  
LI Qi-Hou ◽  
TANG Yi-Wei

Author(s):  
Guochao Bai ◽  
Shimin Wei ◽  
Duanling Li ◽  
Qizheng Liao ◽  
Xianwen Kong

A polygon-scaling mechanism is a single DOF (degree-of-freedom) mechanism for scaling a polygon. This paper presents a tetragon-elements based synthesis method of polygon-scaling mechanisms. According to movable conditions of radial scaling elements, four basic tetragon elements (rhombus element, parallelogram element, kite element and general tetragon element) are proposed. For a given polygon, these four types of elements can be selected based on the characteristics of target polygons to construct polygon-scaling mechanisms in a straightforward manner. Using this synthesis method, some planar 1-DOF scaling mechanisms are obtained with the characteristics of retracting and deploying. Their 3D models are also presented to proof the validity of the proposed method. Finally, a table of tetragon elements with the characteristics of their associated polygon-scaling mechanisms is summarized using which polygon-scaling mechanisms can be easily constructed.


2001 ◽  
Vol 676 ◽  
Author(s):  
Shashank Sharma ◽  
Mahendra K. Sunkara ◽  
Raul Miranda ◽  
Guoda Lian ◽  
Elizabeth C. Dickey

ABSTRACTWe present a novel synthesis technique to grow bulk quantities of semiconductor nanowires at temperatures less than 500 °C. Gallium is used as the liquid medium in a mechanism similar to vapor-liquid-solid (VLS). We demonstrated this low temperature technique with silicon and carbon nanowires. Gallium exhibits extremely low solubility for several elemental semiconductors. This property enables nucleation and growth of nanometer scale wires from large sized gallium droplets (>1 μm) eliminating the need for creation of quantum sized metal droplets.


2019 ◽  
Vol 4 (27) ◽  
pp. 8165-8170
Author(s):  
Xin Zhao ◽  
Dandan Ke ◽  
Ying Cai ◽  
Feng Hu ◽  
Jingjing Liu ◽  
...  

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