Structure and magnetization reversal mechanism in L10 FePt films with perpendicular magnetic anisotropy

2012 ◽  
Vol 520 (17) ◽  
pp. 5746-5751 ◽  
Author(s):  
S.J. Zhang ◽  
Jian-Guo Zheng ◽  
Z. Shi ◽  
S.M. Zhou ◽  
L. Sun ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Perpendicular Magnetic Anisotropy ◽  
Reversal Mechanism

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

Magnetization reversal in patterned Co(0001) ultrathin films with perpendicular magnetic anisotropy

1996 ◽  
Vol 79 (8) ◽  
pp. 5848 ◽  
Author(s):  
N. Bardou ◽  
B. Bartenlian ◽  
C. Chappert ◽  
R. Mégy ◽  
P. Veillet ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ultrathin Films ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
D. B. Gopman ◽  
C. L. Dennis ◽  
P. J. Chen ◽  
Y. L. Iunin ◽  
P. Finkel ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Microwave-assisted magnetization reversal in a Co/Pd multilayer with perpendicular magnetic anisotropy

2009 ◽  
Vol 95 (8) ◽  
pp. 082505 ◽  
Author(s):  
Yukio Nozaki ◽  
Naoyuki Narita ◽  
Terumitsu Tanaka ◽  
Kimihide Matsuyama
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Perpendicular Magnetic Anisotropy ◽  
Microwave Assisted

scholarly journals Условия возникновения спонтанной осциллирующей магнитной релаксации в синтетических ферримагнетиках Pt/Co/Ir/Co/Pt

2020 ◽  
Vol 62 (3) ◽  
pp. 407
Author(s):  
Р.Б. Моргунов ◽  
А.И. Безверхний ◽  
О.С. Дмитриев ◽  
M.В. Бахметьев
Keyword(s):  
Magnetic Anisotropy ◽  
Total Energy ◽  
Magnetization Reversal ◽  
Energy Barrier ◽  
Magnetic Relaxation ◽  
Perpendicular Magnetic Anisotropy ◽  
Free Layer ◽  
Zeeman Energy ◽  
Magnetization Relaxation ◽  
Triple Points

We had established that the non-monotonic magnetic relaxation appeared, when two or three magnetic fields, switching between stable magnetization states, coincide with each other, in Pt/Co/Ir/Co/Pt synthetic ferrimagnets with perpendicular magnetic anisotropy. Switching fields between stable magnetization states depend on sum of exchange interlayer energy, Zeeman energy and magnetization reversal energy barrier of each layer. This total energy depends on layers thickness and temperature. We had shown that with choose of temperature and free layer thickness we can achieve double or triple points on energy states diagram, which is reason of nonmonotonic magnetization relaxation.

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