Potential of high-mobility sputtered zinc oxide as front contact for high efficiency thin film silicon solar cells

2014 ◽  
Vol 555 ◽  
pp. 138-142 ◽  
Author(s):  
B. Stannowski ◽  
F. Ruske ◽  
S. Neubert ◽  
S. Schönau ◽  
S. Ring ◽  
...  
2006 ◽  
Vol 90 (18-19) ◽  
pp. 3416-3421 ◽  
Author(s):  
Y. Fujioka ◽  
A. Shimizu ◽  
H. Fukuda ◽  
T. Oouchida ◽  
S. Tachibana ◽  
...  

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NB02 ◽  
Author(s):  
Tomomi Meguro ◽  
Andrea Feltrin ◽  
Takashi Suezaki ◽  
Mitsuru Ichikawa ◽  
Takashi Kuchiyama ◽  
...  

2011 ◽  
Vol 1321 ◽  
Author(s):  
Miro Zeman ◽  
Olindo Isabella ◽  
Klaus Jäger ◽  
Pavel Babal ◽  
Serge Solntsev ◽  
...  

ABSTRACTDue to the increasing complexity of thin-film silicon solar cells, the role of computer modeling for analyzing and designing these devices becomes increasingly important. The ASA program was used to study two of these advanced devices. The simulations of an amorphous silicon solar cell with silver nanoparticles embedded in a zinc oxide back reflector demonstrated the negative effect of the parasitic absorption in the particles. When using optical properties of perfectly spherical particles a modest enhancement in the external quantum efficiency was found. The simulations of a tandem micromorph solar cell, in which a zinc oxide based photonic crystal-like multilayer was incorporated as an intermediate reflector (IR), demonstrated that the IR resulted in an enhanced photocurrent in the top cell and could be used to optimize the current matching of the top and bottom cell.


2012 ◽  
Vol 1426 ◽  
pp. 131-135
Author(s):  
Mathieu Boccard ◽  
Matthieu Despeisse ◽  
Christophe Ballif

ABSTRACTThe challenge for all photovoltaic technologies is to maximize light absorption, convert photons with minimal losses to electrical charges and efficiently extract them towards the electrical circuit. For thin film silicon solar cells, a compromise must be found as light trapping is usually performed through textured interfaces, that are detrimental to the subsequent growth of dense and high quality silicon layers. We introduce here the concept of smoothening intermediate reflecting layers (IRL), enabling to combine high currents and good electrical quality in Micromorph devices in the superstrate configuration. After exposing the motivation for such structures, we validate the concept by showing a VOCenhancement when employing a polished silicon-oxide-based IRL. Shunting issues and additional reflection losses are pointed out with such technique, highlighting the need to develop alternative techniques for an efficient morphology adaptation before the microcrystalline silicon cell growth.


1998 ◽  
Vol 51 (1) ◽  
pp. 95-104 ◽  
Author(s):  
G.F. Zheng ◽  
W. Zhang ◽  
Z. Shi ◽  
D. Thorp ◽  
R.B. Bergmann ◽  
...  

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KB10 ◽  
Author(s):  
Takuya Matsui ◽  
Keigou Maejima ◽  
Adrien Bidiville ◽  
Hitoshi Sai ◽  
Takashi Koida ◽  
...  

2017 ◽  
Vol 214 (12) ◽  
pp. 1700544 ◽  
Author(s):  
Hitoshi Sai ◽  
Takuya Matsui ◽  
Koji Matsubara

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