In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter

2014 ◽  
Vol 570 ◽  
pp. 159-163 ◽  
Author(s):  
H. Hattab ◽  
G. Jnawali ◽  
M. Horn-von Hoegen
1997 ◽  
Vol 04 (06) ◽  
pp. 1167-1171 ◽  
Author(s):  
CH. AMMER ◽  
K. MEINEL ◽  
H. WOLTER ◽  
A. BECKMANN ◽  
H. NEDDERMEYER

Recent scanning tunneling microscopy (STM) observations revealed different layer structures in the heteroepitaxial Cu/Ru(0001) system with increasing film thickness attributed to various stages of strain relaxation. High-resolution low-energy electron diffraction (HRLEED) analysis permits one to derive more exactly both lattice periodicities and lattice rotations. Furthermore, the representative character of local STM results can be proved. However, STM measurements are needed to identify and to assign the satellite spots to coexistent different superstructures which are superposed incoherently in the diffraction pattern. Generally, the integral LEED results confirm the crystallographic data obtained by STM in a local scale.


1991 ◽  
Vol 237 ◽  
Author(s):  
H.-N. Yang ◽  
J.-K. Zuot ◽  
K. Fang ◽  
T.-M. Lu ◽  
G.-C. Wang

ABSTRACTRecent advances in high–resolution low–energy electron diffraction (HRLEED) techniques have led to a new capability which provides both very high spatial and temporal resolutions to probe quantitatively the equilibrium and dynamical processes that occur on surfaces and growth fronts. These techniques are especially powerful when the surface or growth front contains atomic steps. Different distributions of steps give different surface atomic pair correlation functions and therefore different angular profile shapes in the diffraction pattern. Recent examples of quantitative HRLEED study of low index plane equilibrium roughening and preroughening transitions are presented. In the growth dynamics, both two–level and multilevel step structures are considered. Examples of the measurements of growth exponents and dynamics scaling are presented.


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