Application of carbon electrodes modified with a mercury layer of a different thickness for studies of the adsorption and kinetics of phase transients of cytidine

2002 ◽  
Vol 536 (1-2) ◽  
pp. 19-35 ◽  
Author(s):  
Stanislav Hasoň ◽  
Vladimı́r Vetterl
Keyword(s):  
Carbon Electrodes ◽  
Kinetics Of ◽  
Different Thickness

An Empirical Model for Predicting the Kinetics of Desorption of Ingredients from Polymeric Materials of Different Thickness

2017 ◽  
Vol 44 (4) ◽  
pp. 35-40
Author(s):  
A.V. Dedov
Keyword(s):  
Polymeric Material ◽  
Empirical Model ◽  
Polymeric Materials ◽  
Reduction Factor ◽  
Desorption Kinetics ◽  
Kinetics Of ◽  
Different Thickness

The use of an empirical model for predicting the desorption kinetics of ingredients and impurities from polymeric materials is analysed. A shortcoming of the model considered is the dependence of the reduction factor on the thickness of the polymeric material, which limits the use of different data. An approach for solving this problem is proposed.

Kinetics of the electrochemical formation of fluorine at carbon electrodes

1962 ◽  
Vol 58 ◽  
pp. 1019 ◽  
Author(s):  
A. J. Arvia ◽  
J. Bebczuk de Cusminsky
Keyword(s):  
Carbon Electrodes ◽  
Kinetics Of

scholarly journals Electrochemical Deposition and Dissolution of Thallium from Sulfate Solutions

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ye. Zh. Ussipbekova ◽  
G. A. Seilkhanova ◽  
Ch. Jeyabharathi ◽  
F. Scholz ◽  
A. P. Kurbatov ◽  
...  
Keyword(s):  
Carbon Electrodes ◽  
Glassy Carbon Electrodes ◽  
Electrode Processes ◽  
Diffusion Limited ◽  
Sulfate Solutions ◽  
Limiting Step ◽  
Scan Rate ◽  
Kinetics Of ◽  
A Current ◽  
Thallium Ions

The electrochemical behavior of thallium was studied on glassy carbon electrodes in sulfate solutions. Cyclic voltammetry was used to study the kinetics of the electrode processes and to determine the nature of the limiting step of the cathodic reduction of thallium ions. According to the dependence of current on stirring rate and scan rate, this process is diffusion limited. Chronocoulometry showed that the electrodeposition can be performed with a current efficiency of up to 96% in the absence of oxygen.

Kinetics of Light-Induced Changes in P-I-N Cells with Protocrystalline Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
R.J. Koval ◽  
J. Koh ◽  
Z. Lu ◽  
Y. Lee ◽  
L. Jiao ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Flow Ratio ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Evolutionary Phase ◽  
Induced Changes ◽  
Kinetics Of ◽  
Different Thickness

AbstractStudies have been carried out on the thickness dependent transition between the amorphous and microcrystalline phases in intrinsic Si:H materials (i-layers) and its effect on p-i-n solar cell performance [1]. P(a-SiC:H)-i(a-Si:H)-n(μcSi:H) cell structures were deposited with the intrinsic Si:H layer thickness and the flow ratio of hydrogen to silane, R=[H2]/[SiH4], guided by an evolutionary phase diagram obtained from real-time spectroscopic ellipsometry. The thickness range over which the fill factors are controlled by the bulk was established and their characteristics investigated with different protocrystalline i-layer materials (i.e., materials prepared near the amorphous to microcrystalline boundary but on the amorphous side). Insights into the properties of these materials and the effects of the transition to the microcrystalline phase were obtained from the systematic changes in the initial fill factors, their light-induced changes, and their degraded steady states for cells with i-layers of different thickness and H2 dilution.

Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO2 Interface Defects

1997 ◽  
Vol 490 ◽  
Author(s):  
G. V. Gadiyak
Keyword(s):  
Thermal Dissociation ◽  
Defect States ◽  
Dissociation Kinetics ◽  
Silicon Dioxide Film ◽  
Passivated Silicon ◽  
Silicon Defects ◽  
Kinetics Of ◽  
And Diffusion ◽  
Different Thickness ◽  
Dioxide Film

ABSTRACTA simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO2 interface, such as Pb - centers, during vacuum thermal annealing has been suggested. This model considers reactions of hydrogen with defect states at the Si/SiO2 interface and diffusion of liberated atomic and molecular hydrogen in a silicon dioxide film. An excellent agreement was obtained between the experimental and numerical simulation results for oxides with different thickness (200–1024 Å), grown both (111) and (100) samples and annealed in the temperature range (480–700° C).

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