Kinetics of Light-Induced Changes in P-I-N Cells with Protocrystalline Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
R.J. Koval ◽  
J. Koh ◽  
Z. Lu ◽  
Y. Lee ◽  
L. Jiao ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Flow Ratio ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Evolutionary Phase ◽  
Induced Changes ◽  
Kinetics Of ◽  
Different Thickness

AbstractStudies have been carried out on the thickness dependent transition between the amorphous and microcrystalline phases in intrinsic Si:H materials (i-layers) and its effect on p-i-n solar cell performance [1]. P(a-SiC:H)-i(a-Si:H)-n(μcSi:H) cell structures were deposited with the intrinsic Si:H layer thickness and the flow ratio of hydrogen to silane, R=[H2]/[SiH4], guided by an evolutionary phase diagram obtained from real-time spectroscopic ellipsometry. The thickness range over which the fill factors are controlled by the bulk was established and their characteristics investigated with different protocrystalline i-layer materials (i.e., materials prepared near the amorphous to microcrystalline boundary but on the amorphous side). Insights into the properties of these materials and the effects of the transition to the microcrystalline phase were obtained from the systematic changes in the initial fill factors, their light-induced changes, and their degraded steady states for cells with i-layers of different thickness and H2 dilution.

Kinetics of Light Induced Changes in Protocrystalline Thin Film Materials and Solar Cells

2000 ◽  
Vol 609 ◽  
Author(s):  
Randy Koval ◽  
Xinwei Niu ◽  
Joshua Pearce ◽  
Lihong Jiao ◽  
Gautam Ganguly ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Degradation Kinetics ◽  
Cell Structures ◽  
The Many ◽  
Induced Changes ◽  
Charged Defects ◽  
Kinetics Of

ABSTRACTStudies have been carried out on the kinetics of light induced changes in thin films and solar cells fabricated in different laboratories. Unlike the many studies on undiluted a-Si:H films the kinetics reported here are for 1 sun illuminations carried out to the degraded steady state (DSS). The light induced changes at temperatures from 25 to 100°C were characterized with electron mobility lifetime products and subgap absorption in films and fill factors in solar cells. The significant changes in the degradation kinetics that occur in these materials in this t mperature range have further confirmed the importance of charged defects, not only in the annealed state, but also in the degraded steady states. Results are also presented on corresponding solar cell structures, which also indicate that defects other than neutral dangling bonds have to be taken into account if any meaningful evaluation is to be made of their solar cell properties.

scholarly journals Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

2014 ◽  
Vol 571 ◽  
pp. 756-761 ◽  
Author(s):  
Daisuke Murata ◽  
Tetsuya Yuguchi ◽  
Hiroyuki Fujiwara
Keyword(s):  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Tandem Solar Cell ◽  
Cell Structures

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now

1997 ◽  
Vol 467 ◽  
Author(s):  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Paper Briefly ◽  
Cell Structures ◽  
Large Effort ◽  
Induced Changes ◽  
The Impact ◽  
Made In

ABSTRACTThe quest for understanding and especially controlling the reversible light induced changes in a-Si:H based materials has been ongoing for the last twenty years. This has been accompanied by a corresponding large effort in minimizing their effects on more efficient a-Si:H based solar cells. Despite the complexities in both the phenomena as well as the solar cells, progress has been made in both the scientific and technological arenas. This paper briefly reviews primarily studies on the characterization and reduction of the metastable changes in materials and the correlation of these changes with those in efficient solar cells. It will discuss the impact of studies on materials as well as the continuous advances made with “engineering” of solar cell structures on their improved stabilized performance.

Correlation of Small-Angle X-Ray Scattering and Solar Cell Performance of a-SiGe:H Alloys

1993 ◽  
Vol 297 ◽  
Author(s):  
S.J. Jones ◽  
Y. Chen ◽  
D.L. Williamson ◽  
X. Xu ◽  
J. Yang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Small Angle ◽  
Film Surface ◽  
Nanometer Scale ◽  
Low Density ◽  
Solar Cell Performance ◽  
X Ray ◽  
X Ray Scattering ◽  
Cell Structures ◽  
Ray Scattering

Small-angle x-ray scattering (SAXS) measurements were made on a-SiGe:H alloys to study microstructure on the nanometer scale as a function of Ge content, and the results were compared with representative single-junction solar cell properties. Samples consisting of only the i-layer were used for SAXS. Above a Ge content of 20 %, a significant increase in SAXS was seen. From measurements made with the samples tilted relative to the incident x-ray beam, the increase in scattering is attributed to the appearance of elongated low density regions in the film, modeled as ellipsoidal microvoids, which are preferentially oriented perpendicular to the film surface and may be related to columnar-like microstructure. Flotation density measurements support the presence of low density regions. Initial and light-degraded measurements on corresponding solar cell structures do not show a correlation between SAXS and initial cell properties; there is, however, some evidence that the light-induced degradation is higher for cells with larger amounts of SAXS-detected microstructure and this needs further investigation.

Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures

1998 ◽  
Vol 313-314 ◽  
pp. 469-473 ◽  
Author(s):  
Joohyun Koh ◽  
H. Fujiwara ◽  
Yiwei Lu ◽  
C.R. Wronski ◽  
R.W. Collins
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Cell Structures ◽  
Silicon Based

scholarly journals Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Light Trapping ◽  
Photovoltaic Effect ◽  
Open Circuit ◽  
Limiting Factors ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Silicon Silicon

A fabrication process for silicon/silicon dioxide (Si/SiO2) superlattice microwire array solar cells was developed. The Si/SiO2 superlattice microwire array was fabricated using a microsphere lithography process with polystyrene particles. The solar cell shows a photovoltaic effect and an open-circuit voltage of 128 mV was obtained. The limiting factors of the solar cell performance were investigated from the careful observations of the solar cell structures. We also investigated the influence of the microwire array structure on light trapping in the solar cells.

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