Electron–vibrational mode coupling in (Ph4P)2·C60·I from Raman scattering

2000 ◽  
Vol 555 (1-3) ◽  
pp. 131-137 ◽  
Author(s):  
A Graja ◽  
R Lipiec ◽  
M Polomska
1992 ◽  
Vol 97 (9) ◽  
pp. 5956-5963 ◽  
Author(s):  
H. Li ◽  
Gregory S. Ezra ◽  
Laura A. Philips

2019 ◽  
Vol 100 (4) ◽  
Author(s):  
F. M. Souza ◽  
P. A. Oliveira ◽  
L. Sanz

1999 ◽  
Vol 433-435 ◽  
pp. 48-52 ◽  
Author(s):  
Claire E. Jordan ◽  
Stephan J. Stranick ◽  
Richard R. Cavanagh ◽  
Lee J. Richter ◽  
D.Bruce Chase

1993 ◽  
Vol 86 (4) ◽  
pp. 221-225 ◽  
Author(s):  
T. Pichler ◽  
M. Matus ◽  
H. Kuzmany

1988 ◽  
Vol 02 (05) ◽  
pp. 707-711 ◽  
Author(s):  
JINGQING LIU ◽  
YIFENG YAN ◽  
TANG ZHOU ◽  
GUANGCAN CHE ◽  
DAWEI CHANG ◽  
...  

We report both infrared transmission and Raman scattering results on the new superconducting Bi-Sr-Ca-Cu-O system. Because of its layered structure along c axis, some very thin and transparent slices have been got. In the infrared spectrum there is an absorption band around 500cm−1 with a width of about 300cm−1, and a vibrational mode at 840cm−1, higher frequency than those of phonon modes in Y-Ba-Cu-O system, has also been observed. The Raman scattering spectrum shows similar results, but the scattering signals are very weak because of the strong absorption in visible of this system.


2006 ◽  
Vol 957 ◽  
Author(s):  
Esther Alarcon-Llado ◽  
Ramon Cusco ◽  
Luis Artus ◽  
German Gonzalez-Diaz ◽  
Ignacio Martil ◽  
...  

ABSTRACTIn this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to high doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.


1997 ◽  
Vol 93 (7) ◽  
pp. 1297-1304 ◽  
Author(s):  
Chien-Chih Chiang ◽  
Bor-Chyuan Hwang ◽  
a,† Jenwei Yu ◽  
Ji-Yen Cheng ◽  
Chung-Yuan Mou ◽  
...  

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