Effect of oxygen contamination on the properties of the silicon hydrogen alloy materials deposited under conditions near the microcrystalline silicon formation region

2001 ◽  
Vol 289 (1-3) ◽  
pp. 168-174 ◽  
Author(s):  
Namita Dutta Gupta ◽  
Partha Chaudhuri
Keyword(s):  
Microcrystalline Silicon ◽  
Formation Region ◽  
Oxygen Contamination ◽  
Effect Of Oxygen

Effect of Oxygen Contamination on Inhibition Studies in Carbon Dioxide Corrosion

CORROSION ◽  
2005 ◽  
Vol 61 (11) ◽  
pp. 1086-1097 ◽  
Author(s):  
E. Gulbrandsen ◽  
J. Kvarekvål ◽  
H. Miland
Keyword(s):  
Carbon Dioxide ◽  
Carbon Dioxide Corrosion ◽  
Oxygen Contamination ◽  
Effect Of Oxygen ◽  
Inhibition Studies

scholarly journals Effect of oxygen contamination on densification of Fe(Se,Te)

2020 ◽  
Vol 1559 ◽  
pp. 012051
Author(s):  
A. Masi ◽  
C. Alvani ◽  
A. Angrisani Armenio ◽  
M. Bellusci ◽  
G. Celentano ◽  
...  
Keyword(s):  
Oxygen Contamination ◽  
Effect Of Oxygen

scholarly journals Device grade microcrystalline silicon owing to reduced oxygen contamination

1996 ◽  
Vol 69 (10) ◽  
pp. 1373-1375 ◽  
Author(s):  
P. Torres ◽  
J. Meier ◽  
R. Flückiger ◽  
U. Kroll ◽  
J. A. Anna Selvan ◽  
...  
Keyword(s):  
Microcrystalline Silicon ◽  
Oxygen Contamination

The Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys

2006 ◽  
Vol 910 ◽  
Author(s):  
Shouvik Datta ◽  
J. David Cohen ◽  
Steve L. Golledge ◽  
Yueqin Xu ◽  
A. H. Mahan ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Germanium ◽  
Film Growth ◽  
Impurity Level ◽  
Oxygen Impurity ◽  
Hot Wire ◽  
Si Substrates ◽  
Oxygen Contamination ◽  
Effect Of Oxygen ◽  
High Level

AbstractA series of four a Si,Ge:H alloy samples with Ge fractions near 30 at.% were deposited by hot-wire CVD (HWCVD) using a Ta filament maintained at 1800oC. During film growth, the level of oxygen contamination was varied from less than 1019 cm−3 to roughly 5 × 1020 cm−3 using a controlled air-leak. The electronic properties of these films were then characterized using transient photocapacitance (TPC) and transient photocurrent (TPI) spectroscopy, as well as the drive-level capacitance profiling (DLCP) techniques. We observed an unexpected systematic improvement of the electronic properties of these HWCVD a Si,Ge:H with increasing oxygen impurity level, which was reflected by a decrease in the deduced Urbach energies. Comparing these with films co-deposited on stainless-steel versus p+ c-Si substrates, we found significantly better electronic properties in the latter case. Comparisons of the TPC and TPI spectra indicated a very high level of hole collection, consistent with these narrow bandtail distributions.

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