Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure

2002 ◽  
Vol 46 (5) ◽  
pp. 651-654 ◽  
Author(s):  
Jinsung Park ◽  
Seong-June Jo ◽  
Songcheol Hong ◽  
Jong-In Song
2011 ◽  
Vol 54 (3) ◽  
pp. 189-193 ◽  
Author(s):  
Emmanuel Lhuillier ◽  
Nicolas Péré-Laperne ◽  
Emmanuel Rosencher ◽  
Isabelle Ribet-Mohamed ◽  
Alexandru Nedelcu ◽  
...  

1994 ◽  
Vol 299 ◽  
Author(s):  
R.T. Kuroda ◽  
E. Garmire

AbstractIn this paper, we discuss a differentially strained p-doped quantum well infrared photodetector that achieves high performance specifications. We examine key device specifications for a 9 and 18 μm infrared detector. We calculate that through differential strain, these novel detectors have improved gain and substantially reduced dark current over previous quantum well infrared photodetectors, while being able to detect normal incident light.


2002 ◽  
Author(s):  
Yasuhito Uchiyama ◽  
Hironori Nishino ◽  
Yusuke Matsukura ◽  
Tetsuya Miyatake ◽  
Kousaku Yamamoto ◽  
...  

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