Differentially Strained P-Doped Quantum well Infrared Photodetector

In this paper, we discuss a differentially strained p-doped quantum well infrared photodetector that achieves high performance specifications. We examine key device specifications for a 9 and 18 μm infrared detector. We calculate that through differential strain, these novel detectors have improved gain and substantially reduced dark current over previous quantum well infrared photodetectors, while being able to detect normal incident light.