Modification of defects induced by nuclear collisions in Fe and Ni in electronic stopping power regime

Author(s):  
Z.G. Wang ◽  
Ch. Dufour ◽  
Y.F. Jin ◽  
M.D. Hou ◽  
G.M. Jin ◽  
...  
1995 ◽  
Vol 396 ◽  
Author(s):  
Hisato Ogiso ◽  
Shizuka Nakano ◽  
Hiroshi Tokumoto ◽  
Kazushi Yamanaka

AbstractIn order to evaluate the damage caused by a single MeV ion impact, we prepared highly oriented pyrolytic graphite specimens, each implanted with 3.1 MeV Au, Ag, Cu and Si ions at a dose of 2.3×1011 cm-2 (2300 μm-2). We then observed specimens by using friction force microscope, and found round regions caused by single-ion impacts on the implanted surface. The frictional force between the surface and the silicon-nitride tip increased in disordered regions. The number density of the regions differed at individual ion-implanted surface, and was about 1000 μm-2 at the Au-implanted surface, 880 μm-2 at the Ag-implanted surface, 372 μm-2 at the Cu-implanted surface, and 44 μπτ2 at the Si-implanted surface. We calculated the electronic stopping power and the probability of knock-on atom generation by the nuclear collision to determine which process affected the density. We found that the difference in the number density was closely related to that of nuclear collisions.


1994 ◽  
Vol 66 (1-3) ◽  
pp. 231-234 ◽  
Author(s):  
N. Nath ◽  
O.P. Dahinwal ◽  
A. Bhagwat ◽  
D.K. Avasthi ◽  
V. Harikumar ◽  
...  

1990 ◽  
Vol 68 (4) ◽  
pp. 1545-1549 ◽  
Author(s):  
M. Toulemonde ◽  
N. Enault ◽  
Jin Yun Fan ◽  
F. Studer

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