Characterization of diamond-like carbon films before and after pulsed laser irradiation

2000 ◽  
Vol 154-155 ◽  
pp. 201-205 ◽  
Author(s):  
D Vouagner ◽  
Cs Beleznai ◽  
J.P Girardeau-Montaut ◽  
C Templier ◽  
H Gonnord
1989 ◽  
Vol 55 (4) ◽  
pp. 351-353 ◽  
Author(s):  
K. Solomon Harshavardhan ◽  
R. S. Yalamanchi ◽  
L. Kameswara Rao

1998 ◽  
Vol 102 (1-2) ◽  
pp. 113-118 ◽  
Author(s):  
Ashok Kumar ◽  
U Ekanayake ◽  
J.S Kapat

2013 ◽  
Vol 273 ◽  
pp. 625-631 ◽  
Author(s):  
Yi Fang ◽  
Yanbing Hou ◽  
Feng Teng ◽  
Zhidong Lou ◽  
Aiwei Tang ◽  
...  

1998 ◽  
Vol 335 (1-2) ◽  
pp. 27-31 ◽  
Author(s):  
A. Stavrides ◽  
J. Ren ◽  
M. Ho ◽  
J. Cheon ◽  
J. Zink ◽  
...  

1998 ◽  
Vol 127-129 ◽  
pp. 674-678 ◽  
Author(s):  
E Haro-Poniatowski ◽  
M Jouanne ◽  
J.F Morhange ◽  
C Julien ◽  
R Diamant ◽  
...  

2019 ◽  
Vol 20 (4) ◽  
pp. 384-390
Author(s):  
P.O. Gentsar ◽  
S.M. Levytskyi

In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.


Materials ◽  
2013 ◽  
Vol 6 (9) ◽  
pp. 3963-3977 ◽  
Author(s):  
Daniel Sola ◽  
Ana Conde ◽  
Iñaki García ◽  
Elena Gracia-Escosa ◽  
Juan de Damborenea ◽  
...  

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