Dry etching characteristics of (Ba0.6,Sr0.4)TiO3 thin films in high density CF4/Ar plasma

2003 ◽  
Vol 171 (1-3) ◽  
pp. 273-279 ◽  
Author(s):  
Pil-Seung Kang ◽  
Kyoung-Tae Kim ◽  
Dong-Pyo Kim ◽  
Chang-Il Kim ◽  
Alexander M. Efremov
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
High Density ◽  
Ar Plasma

Dry Etching Characteristics of ZrO2Thin Films Using High Density Cl2/Ar Plasma

2010 ◽  
Vol 407 (1) ◽  
pp. 117-124 ◽  
Author(s):  
Jong-Chang Woo ◽  
Xue-Yang ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Ar Plasma

Dry etching of copper thin films in high density plasma of CH3COOH/Ar

2019 ◽  
Vol 672 ◽  
pp. 55-61 ◽  
Author(s):  
Jin Su Ryu ◽  
Eun Taek Lim ◽  
Jae Sang Choi ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

The dry etching of a sol–gel deposited ZnO thin film in a high density BCl3/Ar plasma

2010 ◽  
Vol 518 (10) ◽  
pp. 2905-2909 ◽  
Author(s):  
Jong-Chang Woo ◽  
Doo-Seong Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dry Etching ◽  
High Density ◽  
Zno Thin Film ◽  
Ar Plasma

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
A Srivastava ◽  
D. Kumar ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Single Layer ◽  
Dry Etching ◽  
High Density ◽  
Pattern Transfer ◽  
Removal Rates ◽  
Etch Rates ◽  
Density Plasma ◽  
Maximum Removal

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

High density plasma reactive ion etching of CoFeB magnetic thin films using a CH4/Ar plasma

2012 ◽  
Vol 521 ◽  
pp. 216-221 ◽  
Author(s):  
Eun Ho Kim ◽  
Tea Young Lee ◽  
Byoung Chul Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Magnetic Thin Films ◽  
High Density ◽  
Ion Etching ◽  
Ar Plasma ◽  
Density Plasma

Temperature dependence on dry etching of Al2O3 thin films in BCl3/Cl2/Ar plasma

2009 ◽  
Vol 27 (4) ◽  
pp. 821-825 ◽  
Author(s):  
Xue Yang ◽  
Dong-Pyo Kim ◽  
Doo-Seung Um ◽  
Gwan-Ha Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Dry Etching ◽  
Ar Plasma

Application of high density Ar plasma for optical thin films coating

2000 ◽  
Vol 84 (Appendix) ◽  
pp. 41-41
Author(s):  
Hiroshi Kamaata ◽  
Makoto Sakai ◽  
Kazuei Shikama
Keyword(s):  
Thin Films ◽  
High Density ◽  
Ar Plasma

High-Density Plasma Etching of Iridium Thin Films in a Cl[sub 2]/O[sub 2]/Ar Plasma

2003 ◽  
Vol 150 (5) ◽  
pp. G297 ◽  
Author(s):  
Chee Won Chung ◽  
Hye In Kim ◽  
Young Soo Song
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Ar Plasma ◽  
Density Plasma

Dry Etching of High-k Dielectric Thin Films in HBr/Ar Plasma

2009 ◽  
Vol 54 (9(2)) ◽  
pp. 934-938 ◽  
Author(s):  
Dong-Pyo Kim ◽  
Gwan-Ha Kim ◽  
Jong-Chang Woo ◽  
Hwan-Jun Kim ◽  
Chang-Il Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
Dielectric Thin Films ◽  
High K ◽  
Ar Plasma ◽  
High K Dielectric
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