Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method

1997 ◽  
Vol 48 (1-4) ◽  
pp. 237-242 ◽  
Author(s):  
Y. Inomata ◽  
K. Fukui ◽  
K. Shirasawa
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Surface Texturing ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Ion Etching ◽  
Etching Method

Random reactive ion etching texturing techniques for application of multicrystalline silicon solar cells

2013 ◽  
Vol 546 ◽  
pp. 275-278 ◽  
Author(s):  
Jinsu Yoo ◽  
Jun-Sik Cho ◽  
SeJin Ahn ◽  
Jihye Gwak ◽  
Ara Cho ◽  
...  
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Ion Etching

Reactive Ion Etching Texturing for Multicrystalline Silicon Solar Cells Using a SF6/O2/Cl2Gas Mixture

2013 ◽  
Vol 52 (3S) ◽  
pp. 03BD01 ◽  
Author(s):  
Kwang Mook Park ◽  
Myoung Bok Lee ◽  
Kyeong Su Jeon ◽  
Sie Young Choi
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Ion Etching

Diffusion Processing and Its Matching Property of Multicrystalline Silicon Solar Cells Through Reactive Ion Etching Texturing

2013 ◽  
Vol 42 (6) ◽  
pp. 649-653
Author(s):  
豆维江 DOU Wei-jiang ◽  
秦应雄 QIN Ying-xiong ◽  
巨小宝 JU Xiao-bao ◽  
李锴 LI Kai ◽  
徐挺 XU Ting
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Ion Etching

RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

Solar Energy ◽  
2003 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga
Keyword(s):  
Solar Cells ◽  
Reactive Ion Etching ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Plasma Damage ◽  
Ion Etching ◽  
Low Levels

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

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