Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

2007 ◽  
Vol 14 (3) ◽  
pp. 266-270 ◽  
Author(s):  
Hongyu Liu ◽  
Xueming Ma ◽  
Dongmei Jiang ◽  
Wangzhou Shi
Keyword(s):  
Electrical Properties ◽  
Ball Milling ◽  
High Energy ◽  
High Energy Ball Milling ◽  
Energy Ball ◽  
Doped Zno

Microstructure and Electrical Properties of Er2O3-Doped ZnO-Based Varistor Ceramics Prepared by High-Energy Ball Milling

2007 ◽  
Vol 25 (1) ◽  
pp. 120-123 ◽  
Author(s):  
Liu Hongyu ◽  
Kong Hui ◽  
Jiang Dongmei ◽  
Shi Wangzhou ◽  
Ma Xueming
Keyword(s):  
Electrical Properties ◽  
Ball Milling ◽  
High Energy ◽  
High Energy Ball Milling ◽  
Energy Ball ◽  
Doped Zno

scholarly journals Structural and Electrical Properties of Zn1-xCrxO NTCR Nanoceramics Synthesized by High Energy Ball Milling

2021 ◽  
Author(s):  
Bikram Keshari Das ◽  
Tanushree Das ◽  
Kajal Parashar ◽  
S.K.S Parashar ◽  
Rajeev Kumar ◽  
...  
Keyword(s):  
Particle Size ◽  
Electrical Properties ◽  
Ball Milling ◽  
Structural Parameters ◽  
High Energy ◽  
High Energy Ball Milling ◽  
High Frequency Region ◽  
Structural And Electrical Properties ◽  
Energy Ball ◽  
Doped Zno

Abstract Cr doped ZnO (x = 0-0.04) nanoceramics was successfully synthesized by high energy ball milling (HEBM) technique. The structural and electrical properties of the synthesized sample has been studied in detail. The doping of Cr into ZnO has been verified by X-ray diffraction (XRD) and also from the variation in structural parameters. Rietveld refinement XRD pattern of calcined sample showed the hexagonal wurtzite structure and it did not induce impurity phases. From the XRD, it has been confirm that maximum result confirms that up to 4 atomic% of Cr can be doped into ZnO. The strain of the sample reduced with increase in particle size. After sintering, there is a growth of particle size of Cr doped ZnO sample. The impedance spectroscopy data shows a single semicircle in the high frequency region corresponding to the bulk properties of the nanoceramic sample. The decrease in real part of the impedance with temperature suggests the NTCR behavior of the sample in the temperature range of 300-500 ºC. The temperature dependent relaxation phenomena are also observed for the synthesized ceramic sample at high temperature. Distributed relaxation time suggests that the relaxation in the synthesized samples is of non-Debye type. The equivalent electrical circuit of the semicircular pattern in the impedance spectrum of ZnO and Zn1-xCrxO nanoceramics sample is a parallel combination of bulk resistance (Rb) and bulk capacitance (Cb).

Electrical properties and microstructure of Y-doped BaTiO3 ceramics prepared by high-energy ball-milling

2008 ◽  
Vol 34 (7) ◽  
pp. 1573-1577 ◽  
Author(s):  
K. Park ◽  
J.-G. Kim ◽  
K.-J. Lee ◽  
W.S. Cho ◽  
W.S. Hwang
Keyword(s):  
Electrical Properties ◽  
Ball Milling ◽  
High Energy ◽  
High Energy Ball Milling ◽  
Energy Ball

Microstructure and Electrical Properties of ZnO–Bi2O3-Based Varistor Ceramics by Different High-Energy Ball Milling Time

2012 ◽  
Vol 490-495 ◽  
pp. 3391-3395
Author(s):  
Cheng Hua Zhang ◽  
Ming Shuang Li ◽  
Dong Xu ◽  
Yong Fang Chen ◽  
Yuan Ling Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ball Milling ◽  
Leakage Current ◽  
Threshold Voltage ◽  
Nonlinear Coefficient ◽  
High Energy ◽  
Sem Analysis ◽  
High Energy Ball Milling ◽  
Electrical Measurements ◽  
Energy Ball

The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics prepared by the high-energy ball milling were studied. The varistor ceramics samples were characterized by XRD and SEM analysis, as well as by dc electrical measurements, such as the nonlinearity coefficients, leakage current and threshold voltage. The best electrical characteristics were found in sample by the high-energy ball milling 1 h and sintered at 1000 °C for 2 h, which exhibited the threshold voltage was 457 V/mm, the nonlinear coefficient was 59.3 and the leakage current was 1.18 μA.

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