Investigation of electric-field-dependent population properties in a GaAs/(Al,Ga)As multiple, asymmetric double quantum well structure by photoluminescence spectroscopy

2000 ◽  
Vol 7 (1-2) ◽  
pp. 259-262 ◽  
Author(s):  
L Schrottke ◽  
R Hey ◽  
H.T Grahn

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1307-1310 ◽  
Author(s):  
K. Bernhard ◽  
A. Zrenner ◽  
G. Böhm ◽  
G. Tränkle ◽  
G. Weimann


1989 ◽  
Vol 55 (5) ◽  
pp. 454-456 ◽  
Author(s):  
Domenico Campi ◽  
Claude Alibert


2019 ◽  
Vol 256 (5) ◽  
pp. 1800337
Author(s):  
Sangeeta K. Palo ◽  
Narayan Sahoo ◽  
Ajit K. Panda ◽  
Trinath Sahu




2004 ◽  
Vol 03 (01n02) ◽  
pp. 203-211 ◽  
Author(s):  
Yu. A. ALESHCHENKO ◽  
V. V. KAPAEV ◽  
Yu. V. KOPAEV ◽  
P. S. KOP'EV ◽  
V. M. USTINOV ◽  
...  

The specific features of the behavior of electron states in GaAs / AlGaAs double quantum well structure with strongly asymmetric barriers in an external electric field have been studied both theoretically and experimentally. This structure is the principal part of the active element of a quantum unipolar laser proposed by us earlier, since it contains the lower laser subband possessing the property of 2D–3D transformation. The drastic variations in the photoluminescence peak intensity, FWHM, and area with field demonstrate the possibility of controlling the dimensionality of this subband.





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