Development of Line Analysis and Real-Time Elemental Mapping System in Stem Equipped with a Two-Window Energy Filter

2001 ◽  
Vol 7 (S2) ◽  
pp. 1134-1135
Author(s):  
K. Kaji ◽  
T. Aoyama ◽  
S. Taya ◽  
S. Isakozawa
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Elemental Mapping ◽  
Additional Function ◽  
Edge Structure ◽  
Transmission Electron ◽  
Mapping System ◽  
Scanning Transmission

The ability to obtain elemental maps processed by using inelastically scattered electrons in a transmission electron microscope (TEM) or a scanning transmission electron microscope (STEM) is extremely useful in the analysis of materials, and semiconductor devices such as ULSI’s and GMR heads. Electron energy loss spectra (EELS) also give useful information not only to identify unknown materials but also to study chemical bonding states of the objective atoms. Hitachi developed an elemental mapping system, consisting of a STEM (Hitachi, HD- 2000) equipped with a two-window energy filter (Hitachi, ELV-2000), and performed realtime conventional jump-ratio images with nanometer resolution by in-situ calculation of energy-filtered signals [1]. Additional function of acquiring EELS along any lines on specimen has been developed in this system to investigate the energy loss near edge structure (ELNES).Figure 1 shows a schematic figure of the two-window energy filter, consisting of two quadrupole lenses for focusing and zooming spectra, respectively, a magnetic prism spectrometer, a deflection coil and two kinds of electron beam detectors.

Development of a Real-Time Elemental Mapping System in a Scanning Transmission Electron Microscope

2000 ◽  
Vol 6 (S2) ◽  
pp. 178-179
Author(s):  
K. Kaji Ueda ◽  
T. Aoyama ◽  
S. Taya ◽  
H. Tanaka ◽  
S. Isakozawa
Keyword(s):  
Electron Microscope ◽  
Real Time ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Objective Lens ◽  
Elemental Mapping ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Mapping System ◽  
Scanning Transmission

The ability to obtain elemental maps in a transmission electron microscope (TEM) or scanning transmission electron microscope (STEM) is extremely useful in the analysis of materials, and semiconductor devices such as ULSI's and GMR heads. Hitachi has developed a new type of elemental mapping system, consisting of a STEM (Hitachi, HD-2000) equipped with a two-window electron energy filter. In-situ calculation of the energy-filtered signal makes it possible to observe real time elemental mapping images with nanometer resolution.Figure 1 shows a schematic of the elemental mapping system. In the STEM, electrons are generated from a cold field emission gun and accelerated to a potential of 200 kV. The electrons arc focused by the objective lens into a small probe (<1 nm), which is then rastered over the specimen using scanning coils. Transmitted electrons are collected by an energy filter, which is located beneath the specimen., and consists of quadrupole lenses, a magnetic prism spectrometer and two kinds of electron beam energy detectors.

ELECTRON ENERGY LOSS SPECTROSCOPY AND ANNULAR DARK FIELD IMAGING AT A NANOMETER RESOLUTION IN A SCANNING TRANSMISSION ELECTRON MICROSCOPE

2000 ◽  
Vol 07 (04) ◽  
pp. 475-494 ◽  
Author(s):  
O. STÉPHAN ◽  
A. GLOTER ◽  
D. IMHOFF ◽  
M. KOCIAK ◽  
C. MORY ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

The basics of electron energy loss spectroscopy (EELS) performed in the context of a scanning transmission electron microscope are described. This includes instrumentation, information contained in an EELS spectrum, data acquisition and processing, and some illustrations by a few examples.

SiO2 Formation at the Aluminum Oxide/Si(100) Interface

2002 ◽  
Vol 747 ◽  
Author(s):  
A. Roy Chowdhuri ◽  
C. G. Takoudis ◽  
R. F. Klie ◽  
N. D. Browning
Keyword(s):  
Electron Microscope ◽  
Aluminum Oxide ◽  
Energy Loss ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Z Contrast ◽  
Electron Energy Loss

ABSTRACTThin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300°C. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3. On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.

Atomic-Resolution Chemical Analysis at 100 Kv in the Scanning Transmission Electron Microscope

1994 ◽  
Vol 332 ◽  
Author(s):  
N. D. Browning ◽  
M. F. Chisholm ◽  
S. J. Pennycook
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Transmission Electron Microscope ◽  
Atomic Structure ◽  
Core Loss ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Probe Size ◽  
Scanning Transmission

ABSTRACTIn a 100 kV VG HB501 UX dedicated scanning transmission electron microscope, the 2.2 Å probe size allows the atomic structure to be observed with compositional sensitivity in the Z-contrast image. As this image requires only the high-angle scattering, it can be used to position the probe for simultaneous electron energy loss spectroscopy. Energy loss signals in the core loss region of the spectrum (>300 eV) are sufficiently localized that the spatial resolution is limited only by the probe. The electronic structure of the material at the interface can thus be determined on the same scale as the changes in composition, and atomic structure can be observed in the image, allowing the structure and chemical bonding at interfaces and boundaries to be characterized at the atomic level.

Sign in / Sign up

Export Citation Format

Share Document