Light Absorption Enhancement and Laser-Induced Damage Ability Improvement of AA 6061 with Non-porous Alumina /CdSe@Al2O3/SiO2 Functional Gradient Films

Numerical calculations of ultraviolet to near-infrared absorption spectra by cadmium selenide quantum dots (CdSe QDs) doped in anodic aluminum oxide pores were performed using a finite-difference time-domain model. The height, diameter, and periodic spacing of the pores were optimized. Light absorption by the dots was enhanced by increasing the height and decreasing the diameter of the pores. When the height was less than 1 μm, visible light absorption was enhanced as the spacing was reduced from 400 nm to 100 nm. No enhancement was observed for heights greater than 6 μm. Finally, the optical mode coupling of the aluminum oxide and the quantum dots was enhanced by decreasing the pore diameter and periodic spacing, and increasing the height. Laser ablation verified light absorption enhancement by the CdSe QDs. The experiment verified the improvement of the laser-induced damage ability with wavelength of 355-nm after aluminum alloy 6061 coated with functional films, which was fabricated based on numerical calculations.

Research on selection of abrasive grain size and cutting parameters when grinding of interrupted surface using aluminum oxide grinding wheel with ceramic binder

In this article, a study on intermittent surface grinding using aluminum oxide grinding wheel with ceramic binder is presented. The testing material is 20XH3A steel (GOST standard – Russian Federation). The testing sample has been sawn 6 grooves, with the width of each groove of 10 mm, the grooves are evenly distributed on the circumference of sample. The testing sample resembles a splined shaft. An experimental matrix of nine experiments has been built by Taguchi method, in which abrasive grain size, workpiece speed, feed rate and depth of cut were selected as input variables. At each experiment, surface roughness (Ra) and roundness error (RE) have been measured. Experimental results show that the aluminum oxide and ceramic binder grinding wheels are perfectly suitable for grinding intermittent surface of 20XH3A steel. Data Envelopment Analysis based Ranking (DEAR) method has been used to solve the multi-objective optimization problem. The results also showed that in order to simultaneously ensure minimum surface roughness and RE, abrasive grain size is 80 mesh, workpiece speed is 910 rpm, feed rate is 0.05 mm/rev and depth of cut is 0.01 mm. If evaluating the grinding process through two criteria including surface roughness and RE, depth of cut is the parameter having the greatest effect on the grinding process, followed by the influence of feed rate, workpiece speed, and abrasive grain is the parameter having the least effect on the grinding process. In addition, the effect of each input parameter on each output parameter has also been analyzed, and orientations for further works have also been recommended in this article

Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.

Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide

Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.

Interconnected three-dimensional anodized aluminum oxide (3D-AAO) metamaterials using different waveforms and metal layers for RGB display technology applications

Research into the artificial reproduction of vibrant colours in natural creatures and the reproduction of their structural colours has generated considerable interest. One inorganic material that have been studied for...