Consolidation of 2D Frameworks Based on Corner-Shared Supertetrahedral T5 Clusters via M2OS2 Units for Tunable Photoluminescent and Semiconductor Properties

2021 ◽  
Author(s):  
Long Sun ◽  
Hong-Yan Zhang ◽  
Zhikai Qi ◽  
Xian-Ming Zhang
Keyword(s):  
Semiconductor Properties

SEMICONDUCTOR PROPERTIES OF THE ANODIC POLYMER OBTAINED ON PLATINUM FROM SELENOCYANATE AMMONIATE

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-1357-C3-1359
Author(s):  
M. Bragadin ◽  
G. Scarponi ◽  
F. Ossola ◽  
F. Pucciarelli ◽  
M. G. Bettoli
Keyword(s):  
Semiconductor Properties

Study of Bismuth Telluride Crystal Strength

2019 ◽  
pp. 1-8
Author(s):  
A. A. Gorbatovskiy
Keyword(s):  
Tensile Strength ◽  
Bismuth Telluride ◽  
Elasticity Modulus ◽  
Testing Machine ◽  
Bend Testing ◽  
Instron Testing Machine ◽  
Measurement Results ◽  
Strength Tests ◽  
Semiconductor Properties

The article presents results of strength tests of bismuth telluride prismatic samples obtained by growing crystals. These crystals have semiconductor properties and are used in the heat machines, the run-ability of which largely depends on the strength of crystals. Data available in the literature are significantly different from each other. It has been shown that, the most consistent strength tests results are obtained in case of bend testing. The measurement results of the elasticity modulus and tensile strength are given. For tests, an INSTRON testing machine with maximum direct stress of the 1000 H was used.

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Effect of Benzene Derivatives as Guest Molecules on Semiconductor Properties of MOF‐199

2021 ◽  
Vol 6 (3) ◽  
pp. 425-429
Author(s):  
Haleemathul Zahadiya ◽  
Ruwan P. Wijesundera ◽  
Champika V. Hettiarachchi ◽  
Ishanie R. Perera
Keyword(s):  
Benzene Derivatives ◽  
Guest Molecules ◽  
Semiconductor Properties

ChemInform Abstract: Metastable Cd4Sb3: A Complex Structured Intermetallic Compound with Semiconductor Properties.

ChemInform ◽  
2009 ◽  
Vol 40 (7) ◽  
Author(s):  
Andreas Tenga ◽  
Sven Lidin ◽  
Jean-Philippe Belieres ◽  
N. Newman ◽  
Yang Wu ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Semiconductor Properties

Two polymorphic modifications of (BEDT-TTF)2IC12 crystals with metallic and semiconductor properties

1988 ◽  
Vol 37 (9) ◽  
pp. 1815-1820
Author(s):  
L. I. Buravov ◽  
A. V. Zvarykina ◽  
A. A. Ignat'ev ◽  
A. I. Kotov ◽  
V. N. Laukhin ◽  
...  
Keyword(s):  
Polymorphic Modifications ◽  
Semiconductor Properties

Semiconductor properties of porphyins

1968 ◽  
Vol 8 (3) ◽  
pp. 389-392 ◽  
Author(s):  
V. A. Livshits
Keyword(s):  
Semiconductor Properties
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