Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

scholarly journals Understanding metal organic chemical vapour deposition of monolayer WS2: the enhancing role of Au substrate for simple organosulfur precursors

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22234-22244
Author(s):  
Ye Fan ◽  
Kenichi Nakanishi ◽  
Vlad P. Veigang-Radulescu ◽  
Ryo Mizuta ◽  
J. Callum Stewart ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Chemical Reactions ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Ws2 Monolayer

A deconstructed MOCVD model process allows in-operando fingerprinting of the chemical reactions that underpin WS2 monolayer crystal growth, and highlights the enhancing role of Au support in conjunction with simple organosulfide precursors.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

1990 ◽  
Vol 216 ◽  
Author(s):  
S.P. Russo ◽  
R.G. Elliman ◽  
P.N. Johnston ◽  
G.N. Pain
Keyword(s):  
Gas Flow ◽  
Vapour Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pixe Analysis ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Thickness Variations

ABSTRACTThe techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal–organic chemical vapour deposition

1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pressure Data ◽  
Metal Organic
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