Effect of Ligand on the Electronic State of Gold in Ligand-Protected Gold Clusters Elucidated by X-ray Absorption Spectroscopy

2021 ◽  
Vol 125 (5) ◽  
pp. 3143-3149
Author(s):  
Tomoki Matsuyama ◽  
Jun Hirayama ◽  
Yu Fujiki ◽  
Soichi Kikkawa ◽  
Wataru Kurashige ◽  
...  
2013 ◽  
Vol 82 (12) ◽  
pp. 124717 ◽  
Author(s):  
Takahiro Shimono ◽  
Daiki Tanabe ◽  
Wataru Kobayashi ◽  
Hiroaki Nitani ◽  
Yutaka Moritomo

2009 ◽  
Vol 190 ◽  
pp. 012070 ◽  
Author(s):  
N Ishimatsu ◽  
R Sasada ◽  
H Maruyama ◽  
T Ichikawa ◽  
H Miyaoka ◽  
...  

2012 ◽  
Vol 59 (10) ◽  
pp. 1270-1274
Author(s):  
Tai-Feng Hung ◽  
Hong-Chang Wong ◽  
Yi-Chun Tu ◽  
Chin-Chang Shen ◽  
Ru-Shi Liu ◽  
...  

2021 ◽  
Vol 28 (6) ◽  
Author(s):  
Matt S. Queen ◽  
Farideh Jalilehvand ◽  
Robert K. Szilagyi

Sulfur K-edge X-ray absorption spectroscopy (XAS) was employed to experimentally characterize the coordinative bond between the thiourea (TU) or thiocarbamide ligand and transition metal (TM) ions Zn2+, Co2+ and Ni2+ in distorted tetrahedral and octahedral homoleptic coordination environments. Comparisons of XAS spectra of the free TU ligand and [Zn(TU)4]2+, [Co(TU)4]2+ and [Ni(TU)6]2+ complexes clearly identify spectral features unique to TM2+–S(TU) bonding. Quantitative analysis of pre-edge intensities describes the covalency of Ni2+—S(TU) and Co2+—S(TU) bonding to be at most 21% and 9% as expressed by the S 3p contributions per TM 3d electron hole. Using relevant Ni2+ complexes with dithiocarbamate and thioether ligands, we evaluated the empirical S 1s → 3p transition dipole integrals developed for S-donor ligands and their dependence on heteroatom substitutions. With the aid of density functional theory-based ground electronic state calculations, we found evidence for the need of using a transition dipole that is dependent on the presence of conjugated heteroatom (N) substitution in these S-donor ligands.


2004 ◽  
Vol 95 (1/2) ◽  
pp. 77-86 ◽  
Author(s):  
Javier Guzman ◽  
Stefan Kuba ◽  
Juan C. Fierro-Gonzalez ◽  
Bruce C. Gates

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