scholarly journals Nonequilibrium Lattice Dynamics in Monolayer MoS2

2021 ◽  
Vol 12 (6) ◽  
pp. 1734-1740
Author(s):  
Fabio Caruso
Keyword(s):  
Lattice Dynamics ◽  
Monolayer Mos2

Evolution of local strain in Ag-deposited monolayer MoS2 modulated by interface interactions

Nanoscale ◽  
2019 ◽  
Vol 11 (46) ◽  
pp. 22432-22439 ◽  
Author(s):  
Yinghui Sun ◽  
Yan Aung Moe ◽  
Yingying Xu ◽  
Yufei Sun ◽  
Xuewen Wang ◽  
...  
Keyword(s):  
Local Strain ◽  
Monolayer Mos2 ◽  
Interface Interaction

Local strain is best preserved on Al2O3 but relaxed most easily on mica because of the interface interaction from substrates.

Crystal structure and lattice dynamics of hydrogen-loaded austenitic steel

2003 ◽  
Vol 112 ◽  
pp. 407-410
Author(s):  
S. A. Danilkin ◽  
M. Hölzel ◽  
H. Fuess ◽  
H. Wipf ◽  
T. J. Udovic ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Austenitic Steel ◽  
Lattice Dynamics

A lattice-dynamics model of the interaction of a dislocation with point defects

1984 ◽  
Vol 45 (8) ◽  
pp. 1337-1345 ◽  
Author(s):  
J.A. Caro ◽  
N. Glass
Keyword(s):  
Point Defects ◽  
Lattice Dynamics ◽  
Dynamics Model

INVESTIGATION OF LATTICE DYNAMICS WITH117Sn AND119Sn

1974 ◽  
Vol 35 (C6) ◽  
pp. C6-375-C6-377
Author(s):  
W. MÜLLER ◽  
H. WINKLER ◽  
E. GERDAU
Keyword(s):  
Lattice Dynamics

LATTICE DYNAMICS CALCULATIONS FOR SOLID BIPHENYL IN THE HIGH TEMPERATURE PHASE

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-599-C6-601 ◽  
Author(s):  
T. Wasiutynski ◽  
I. Natkaniec ◽  
A. I. Belushkin
Keyword(s):  
High Temperature ◽  
Lattice Dynamics ◽  
High Temperature Phase ◽  
Temperature Phase

MICROSCOPIC THEORY OF LATTICE DYNAMICS AND RECONSTRUCTION OF SEMICONDUCTOR SURFACES

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-834-C6-836
Author(s):  
A. Muramatsu ◽  
W. Hanke
Keyword(s):  
Lattice Dynamics ◽  
Microscopic Theory ◽  
Semiconductor Surfaces

Lattice dynamics of hcp and bcc zirconium

1979 ◽  
Author(s):  
Jerel L. Zarestky
Keyword(s):  
Lattice Dynamics

Oxygen atom adsorbed on the sulphur vacancy of monolayer MoS2: A promising method for the passivation of the vacancy defect

2020 ◽  
Vol 1187 ◽  
pp. 112906
Author(s):  
Aiqing Wu ◽  
Qinggong Song ◽  
Hongpeng Liu
Keyword(s):  
Oxygen Atom ◽  
Vacancy Defect ◽  
Promising Method ◽  
Monolayer Mos2 ◽  
Sulphur Vacancy
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