scholarly journals Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–xCaxMnO3/Au Memristor Devices

2021 ◽  
Vol 13 (15) ◽  
pp. 18365-18371
Author(s):  
Ville Lähteenlahti ◽  
Alejandro Schulman ◽  
Azar Beiranvand ◽  
Hannu Huhtinen ◽  
Petriina Paturi
ChemInform ◽  
2006 ◽  
Vol 37 (32) ◽  
Author(s):  
A. K. Azad ◽  
S.-G. Eriksson ◽  
Abdullah Khan ◽  
A. Eriksson ◽  
M. Tseggai

2015 ◽  
Vol 27 (3) ◽  
pp. 2255-2259 ◽  
Author(s):  
Zhao Xiahou ◽  
Deok Hyeon Kim ◽  
Hongtao Xu ◽  
Ying Li ◽  
Bo Wha Lee ◽  
...  

2010 ◽  
Vol 96 (12) ◽  
pp. 123502 ◽  
Author(s):  
Haowei Zhang ◽  
Bin Gao ◽  
Bing Sun ◽  
Guopeng Chen ◽  
Lang Zeng ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (10) ◽  
pp. 4482-4488 ◽  
Author(s):  
Yimin Kang ◽  
Yongji Gong ◽  
Zhijian Hu ◽  
Ziwei Li ◽  
Ziwei Qiu ◽  
...  

Green energy sees the light: an accumulative enhancement of MoS2photocatalysis in hydrogen production is achieved by the plasmonic hot electron doping effect.


2002 ◽  
Vol 378-381 ◽  
pp. 273-277 ◽  
Author(s):  
T Uefuji ◽  
K Kurahashi ◽  
M Fujita ◽  
M Matsuda ◽  
K Yamada

2015 ◽  
Vol 75 ◽  
pp. 309-313 ◽  
Author(s):  
Hiroto Ohta ◽  
Eisuke Akabane ◽  
Hiroko Aruga Katori

2020 ◽  
Vol 89 (1) ◽  
pp. 014701
Author(s):  
Toshiki Sunohara ◽  
Takayuki Kawamata ◽  
Kota Shiosaka ◽  
Tomohisa Takamatsu ◽  
Takashi Noji ◽  
...  

2019 ◽  
Vol 55 (2) ◽  
pp. 1-4 ◽  
Author(s):  
Haruka Taniguchi ◽  
Hidenori Takahashi ◽  
Akihiro Terui ◽  
Satoru Kobayashi ◽  
Michiaki Matsukawa ◽  
...  

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