Analysis of Melt Flow Mixing in Czochralski Crystal Growth Process

2012 ◽  
Vol 51 (25) ◽  
pp. 8675-8683 ◽  
Author(s):  
Mojtaba Izadi ◽  
Stevan Dubljevic
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Melt Flow ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process ◽  
Flow Mixing

Melt Flow Simulations of Czochralski Crystal Growth Process of Silicon for Large Crystals

2019 ◽  
Vol 3 (4) ◽  
pp. 41-52 ◽  
Author(s):  
Prashant R. Gunjal ◽  
Milind S. Kulkarni ◽  
Palghat A. Ramachandran
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Melt Flow ◽  
Flow Simulations ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Modeling and Dynamic Characterization of the Czochralski Crystal Growth Process

1993 ◽  
Vol 115 (1) ◽  
pp. 109-114 ◽  
Author(s):  
M. A. Gevelber ◽  
G. Stephanopoulos
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Lumped Parameter Model ◽  
Dynamic Characterization ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process ◽  
Lumped Parameter ◽  
Controller Performance ◽  
Internal Coupling

A lumped parameter model of the Czochralski crystal growth process is proposed that captures the dominant nonlinear dynamics, internal coupling, and disturbance structure. Conventional and advanced actuators are modeled. The dynamic characteristics of the interface shape and input/outputs that limit the achievable controller performance are identified.

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