Melt Flow Simulations of Czochralski Crystal Growth Process of Silicon for Large Crystals

2019 ◽  
Vol 3 (4) ◽  
pp. 41-52 ◽  
Author(s):  
Prashant R. Gunjal ◽  
Milind S. Kulkarni ◽  
Palghat A. Ramachandran
2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  

1993 ◽  
Vol 115 (1) ◽  
pp. 109-114 ◽  
Author(s):  
M. A. Gevelber ◽  
G. Stephanopoulos

A lumped parameter model of the Czochralski crystal growth process is proposed that captures the dominant nonlinear dynamics, internal coupling, and disturbance structure. Conventional and advanced actuators are modeled. The dynamic characteristics of the interface shape and input/outputs that limit the achievable controller performance are identified.


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