DYNAMIC MODELLING OF CZOCHRALSKI CRYSTAL GROWTH PROCESS

1998 ◽  
Author(s):  
Fumimaru Ogino ◽  
T. Inarnuro ◽  
A. Kodo
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Dynamic Modelling ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Modeling and Dynamic Characterization of the Czochralski Crystal Growth Process

1993 ◽  
Vol 115 (1) ◽  
pp. 109-114 ◽  
Author(s):  
M. A. Gevelber ◽  
G. Stephanopoulos
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Lumped Parameter Model ◽  
Dynamic Characterization ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process ◽  
Lumped Parameter ◽  
Controller Performance ◽  
Internal Coupling

A lumped parameter model of the Czochralski crystal growth process is proposed that captures the dominant nonlinear dynamics, internal coupling, and disturbance structure. Conventional and advanced actuators are modeled. The dynamic characteristics of the interface shape and input/outputs that limit the achievable controller performance are identified.

Melt Flow Simulations of Czochralski Crystal Growth Process of Silicon for Large Crystals

2019 ◽  
Vol 3 (4) ◽  
pp. 41-52 ◽  
Author(s):  
Prashant R. Gunjal ◽  
Milind S. Kulkarni ◽  
Palghat A. Ramachandran
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Melt Flow ◽  
Flow Simulations ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Control and System Design for the Czochralski Crystal Growth Process

1993 ◽  
Vol 115 (1) ◽  
pp. 115-121 ◽  
Author(s):  
M. A. Gevelber ◽  
G. Stephanopoulos
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Operating Regime ◽  
Growth Cycle ◽  
Lumped Parameter Model ◽  
Interface Shape ◽  
Control Structures ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process ◽  
Crystal Diameter

An expanded set of control objectives is proposed for the Czochralski crystal growth process. Consideration of the thermal stress near the interface yields an operating regime specification in terms of interface shape. A lumped parameter model is used to determine the performance of alternate inputs and outputs. Based on these considerations, a new control structure is proposed to maintain crystal diameter, interface shape, and thermal gradients throughout the batch growth cycle. The performance of alternative control structures are evaluated.

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