In situ time-resolved x-ray absorption near edge structure study of the nickel oxide electrode

1989 ◽  
Vol 93 (17) ◽  
pp. 6308-6311 ◽  
Author(s):  
J. McBreen ◽  
W. E. O'Grady ◽  
G. Tourillon ◽  
E. Dartyge ◽  
A. Fontaine ◽  
...  

ChemInform ◽  
1989 ◽  
Vol 20 (48) ◽  
Author(s):  
J. MCBREEN ◽  
W. E. O'GRADY ◽  
G. TOURILLON ◽  
E. DARTYGE ◽  
A. FONTAINE ◽  
...  


2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.



1997 ◽  
Vol 144 (7) ◽  
pp. 2398-2404 ◽  
Author(s):  
L. J. Oblonsky ◽  
A. J. Davenport ◽  
M. P. Ryan ◽  
H. S. Isaacs ◽  
R. C. Newman


2002 ◽  
Vol 106 (9) ◽  
pp. 2415-2422 ◽  
Author(s):  
Aritomo Yamaguchi ◽  
Akane Suzuki ◽  
Takafumi Shido ◽  
Yasuhiro Inada ◽  
Kiyotaka Asakura ◽  
...  




2004 ◽  
Vol 59 (10-11) ◽  
pp. 1681-1686 ◽  
Author(s):  
Phil M. Oger ◽  
I. Daniel ◽  
B. Cournoyer ◽  
A. Simionovici


2015 ◽  
Vol 119 (34) ◽  
pp. 19573-19583 ◽  
Author(s):  
Dongniu Wang ◽  
Jigang Zhou ◽  
Yongfeng Hu ◽  
Jinli Yang ◽  
Na Han ◽  
...  


2012 ◽  
Vol 111 (7) ◽  
pp. 07C313 ◽  
Author(s):  
S. J. Chen ◽  
J. S. Garitaonandia ◽  
K. Suzuki


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