High pressure studies. VII. Pressure dependence of cage effects. Products from substituted tert-butyl phenylperacetates

1971 ◽  
Vol 36 (5) ◽  
pp. 657-661 ◽  
Author(s):  
Robert C. Neuman ◽  
Joseph V. Behar
Keyword(s):  
High Pressure ◽  
Pressure Dependence ◽  
Tert Butyl ◽  
High Pressure Studies ◽  
Cage Effects

High-pressure studies. VIII. Thermal decomposition of isomeric tert-butyl vinyl peresters in solution

1971 ◽  
Vol 93 (17) ◽  
pp. 4242-4246 ◽  
Author(s):  
Robert C. Neuman ◽  
Gary D. Holmes
Keyword(s):  
Thermal Decomposition ◽  
High Pressure ◽  
Tert Butyl ◽  
High Pressure Studies

High pressure studies. XVIII. One-bond and two-bond homolytic scission of tert-butyl p-nitrophenylperacetate

1975 ◽  
Vol 40 (21) ◽  
pp. 3147-3149 ◽  
Author(s):  
Robert C. Neuman ◽  
Richard Wolfe
Keyword(s):  
High Pressure ◽  
Tert Butyl ◽  
High Pressure Studies

High pressure studies. IV. Cage effects and activation volumes for homolytic scission reactions

1969 ◽  
Vol 91 (22) ◽  
pp. 6024-6031 ◽  
Author(s):  
Robert C. Neuman ◽  
Joseph V. Behar
Keyword(s):  
High Pressure ◽  
High Pressure Studies ◽  
Cage Effects

High pressure studies. VI. Polar effects in decomposition of substituted tert-butyl phenylperacetates in solution

1971 ◽  
Vol 36 (5) ◽  
pp. 654-657 ◽  
Author(s):  
Robert C. Neuman ◽  
Joseph V. Behar
Keyword(s):  
High Pressure ◽  
Tert Butyl ◽  
High Pressure Studies

High Pressure Studies on HOAB: Pressure Dependence of the Smectic C Layer Spacing

1983 ◽  
Vol 99 (1) ◽  
pp. 297-300 ◽  
Author(s):  
R. Shashidhar ◽  
S. Chandrasekhar
Keyword(s):  
High Pressure ◽  
Pressure Dependence ◽  
Layer Spacing ◽  
Smectic C ◽  
High Pressure Studies

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

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