Raman Spectroscopy of High-Pressure−High-Temperature Polymorph of Hexahydro-1,3,5-trinitro-1,3,5-triazine (ε-RDX)

2010 ◽  
Vol 114 (26) ◽  
pp. 7038-7047 ◽  
Author(s):  
Zbigniew A. Dreger ◽  
Yogendra M. Gupta
1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  

AbstractWe have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.


2000 ◽  
Vol 5 (S1) ◽  
pp. 740-746
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  

We have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.


Science ◽  
1966 ◽  
Vol 154 (3751) ◽  
pp. 895-896 ◽  
Author(s):  
L. C. Towle ◽  
V. Oberbeck ◽  
B. E. Browndagger ◽  
R. E. Stajdohar

2015 ◽  
Vol 205 ◽  
pp. 54-60 ◽  
Author(s):  
Marion Louvel ◽  
Amélie Bordage ◽  
Cécile Da Silva-Cadoux ◽  
Denis Testemale ◽  
Eric Lahera ◽  
...  

2003 ◽  
Vol 57 (10) ◽  
pp. 1300-1303 ◽  
Author(s):  
Yuri E. Gorbaty ◽  
Galina V. Bondarenko ◽  
Eleni Venardou ◽  
Eduardo Garcia-Verdugo ◽  
Maia Sokolova ◽  
...  

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