Polycrystalline GexSi1 − x thin film formation by chemical vapor deposition using silicon difluoride and germanium tetrachloride as precursors

2001 ◽  
Vol 11 (2) ◽  
pp. 687-690 ◽  
Author(s):  
Chi Young Lee ◽  
Wen Tuan Chang ◽  
Chao Shiuan Liu
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Germanium Tetrachloride ◽  
Thin Film Formation

Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition

1997 ◽  
Vol 144 (4) ◽  
pp. 1423-1429 ◽  
Author(s):  
Zhiguo Meng ◽  
Zhonghe Jin ◽  
Bhat A. Gururaj ◽  
Paul Chu ◽  
Hoi S. Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thin Film Formation

Effect of Ni on graphite thin‐film formation from organic materials by chemical vapor deposition

1995 ◽  
Vol 13 (4) ◽  
pp. 2142-2145 ◽  
Author(s):  
Masako Yudasaka ◽  
Rie Kikuchi ◽  
Takeo Matsui ◽  
Kouji Tasaka ◽  
Yoshimasa Ohki ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Organic Materials ◽  
Film Formation ◽  
Chemical Vapor ◽  
Thin Film Formation

Graphite thin‐film formation by chemical‐vapor deposition of o‐methyl‐diaryl ketones

1994 ◽  
Vol 65 (1) ◽  
pp. 46-48 ◽  
Author(s):  
M. Yudasaka ◽  
R. Kikuchi ◽  
T. Matsui ◽  
Y. Ohki ◽  
S. Yoshimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Thin Film Formation

Graphite thin film formation by chemical vapor deposition

1994 ◽  
Vol 64 (7) ◽  
pp. 842-844 ◽  
Author(s):  
M. Yudasaka ◽  
R. Kikuchi ◽  
T. Matsui ◽  
H. Kamo ◽  
Y. Ohki ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Thin Film Formation

ChemInform Abstract: Germanium Thin Film Formation by Low-Pressure Chemical Vapor Deposition.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
Z. MENG ◽  
Z. JIN ◽  
B. A. GURURAJ ◽  
P. CHU ◽  
H. S. KWOK ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thin Film Formation

Graphite thin film formation by chemical vapor deposition

1994 ◽  
Author(s):  
M. Yudasaka ◽  
R. Kikuchi ◽  
T. Matsui ◽  
Y. Ohki ◽  
E. Ota ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Thin Film Formation

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽  
2016 ◽  
Vol 2 (29) ◽  
pp. 1533-1538 ◽  
Author(s):  
S. Ishihara ◽  
Y. Hibino ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Formation ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

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