Tetraphenylethylene derivative capped CH3NH3PbBr3 nanocrystals: AIE-activated assembly into superstructures

2017 ◽  
Vol 196 ◽  
pp. 91-99 ◽  
Author(s):  
Feng Zhang ◽  
Tianye Zhou ◽  
Guogang Liu ◽  
Jianbing Shi ◽  
Haizheng Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Semiconductor Nanocrystals ◽  
Average Diameter ◽  
Emission Feature ◽  
Optical And Electrical Properties ◽  
Ligand Effects ◽  
Organometal Halide Perovskite ◽  
Halide Perovskite ◽  
Reprecipitation Method ◽  
Functionalized Ligands

The surfaces of semiconductor nanocrystals have been known to be a very important factor in determining their optical properties. The introduction of functionalized ligands can further enhance the interactions between nanocrystals, which is beneficial for the assembly of nanocrystals. In a previous report, we developed a ligand-assisted reprecipitation method to fabricate organometal halide perovskite nanocrystals capped with octylamine and oleic acid. Here, a TPE derivative 3-(4-(1,2,2-triphenylvinyl)phenoxy)propan-1-amine, which shows a typical aggregation induced emission feature, is applied to replace octylamine to fabricate CH3NH3PbBr3 nanocrystals. The obtained CH3NH3PbBr3 nanocrystals were nanocubes (average diameter ∼ 11.1 nm) and are likely to assemble into ordered superstructures. By adjusting the chain length of the TPE derivative, we found that the assembly of the CH3NH3PbBr3 nanocrystals was correlated with the interactions between the TPE groups. This provides a new platform to investigate the ligand effects in nanocrystal solids and may potentially achieve enhanced optical and electrical properties.

scholarly journals Scalable Production of Boron Quantum Dots for Broadband Ultrafast Nonlinear Optical Performance

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 687
Author(s):  
Shuolei Meng ◽  
Qianyuan Chen ◽  
Hongjian Lin ◽  
Feng Zhou ◽  
Youning Gong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Relaxation Time ◽  
Nonlinear Optical ◽  
Average Diameter ◽  
Optical Devices ◽  
Nonlinear Optical Properties ◽  
Saturable Absorption ◽  
Nonlinear Optical Susceptibility ◽  
Tandem Structure

A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394–5.34 ps and 4.45–115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS2 tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices.

Structure and Optical Properties of SnS Nanowire Arrays Prepared with Two-Step Method

2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng
Keyword(s):  
Optical Properties ◽  
Electrochemical Deposition ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Step Method ◽  
Single Crystalline ◽  
Uv Visible

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.

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