High performance of TiO2/CdS quantum dot sensitized solar cells with a Cu–ZnS passivation layer

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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High performance and reduced charge recombination of CdSe/CdS quantum dot-sensitized solar cells

Journal of Materials Chemistry ◽

10.1039/c2jm16738g ◽

2012 ◽

Vol 22 (24) ◽

pp. 12058 ◽

Cited By ~ 74

Author(s):

Xiao-Yun Yu ◽

Bing-Xin Lei ◽

Dai-Bin Kuang ◽

Cheng-Yong Su

Keyword(s):

Solar Cells ◽

Quantum Dot ◽

High Performance ◽

Charge Recombination ◽

Cds Quantum Dot ◽

Sensitized Solar Cells

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Improved light-harvesting and suppressed charge recombination by introduction of a nanograss-like SnO2 interlayer for efficient CdS quantum dot sensitized solar cells

RSC Advances ◽

10.1039/c9ra08234d ◽

2019 ◽

Vol 9 (65) ◽

pp. 38047-38054

Author(s):

Sangaraju Sambasivam ◽

Chandu V. V. Muralee Gopi ◽

Hee-Je Kim ◽

Ihab M. Obaidat

Keyword(s):

Solar Cells ◽

Quantum Dot ◽

Intermediate Layer ◽

Light Harvesting ◽

Charge Recombination ◽

Cds Quantum Dot ◽

Sensitized Solar Cells

A SnO2 nanograss (NG) intermediate layer in QDSSCs can suppress charge recombination, enhance light-harvesting and improve the efficiency of the device.

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ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

10.20944/preprints201807.0097.v1 ◽

2018 ◽

Author(s):

Hee-Je Kim ◽

Jin-Ho Bae ◽

Hyunwoong Seo ◽

Masaharu Shiratani ◽

Chandu Venkata Veera Muralee Gopi

Keyword(s):

Solar Cells ◽

Quantum Dot ◽

High Performance ◽

Electrochemical Impedance ◽

Photovoltaic Performance ◽

Charge Recombination ◽

Open Circuit ◽

Passivation Layer ◽

Electrolyte Interface ◽

Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

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