scholarly journals Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs

RSC Advances ◽  
2017 ◽  
Vol 7 (87) ◽  
pp. 55157-55162 ◽  
Author(s):  
Jinjian Zheng ◽  
Jinchai Li ◽  
Zhibai Zhong ◽  
Wei Lin ◽  
Li Chen ◽  
...  
Keyword(s):  
Valence Band ◽  
Light Extraction ◽  
Interband Transitions ◽  
Light Emitting ◽  
Al Content ◽  
Induced Stress ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

The light extraction from AlGaN deep ultraviolet light-emitting diodes (UV LEDs) is known to be limited by the fundamental valence band crossover issue.

Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

2011 ◽  
Vol 208 (7) ◽  
pp. 1501-1503 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Balakrishnan Krishnan ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Al Content ◽  
Dislocation Reduction ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jinchai Li ◽  
Na Gao ◽  
Duanjun Cai ◽  
Wei Lin ◽  
Kai Huang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Virus Transmission ◽  
Quantum Structures ◽  
Light Sources ◽  
Light Emitting ◽  
Al Content ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

AbstractAs demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

scholarly journals Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Power ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

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