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Gallium Nitride Materials and Devices XIV
Latest Publications
TOTAL DOCUMENTS
48
(FIVE YEARS 48)
H-INDEX
2
(FIVE YEARS 2)
Published By SPIE
9781510624788, 9781510624795
Latest Documents
Most Cited Documents
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Front Matter: Volume 10918
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2531211
◽
2019
◽
Keyword(s):
Matter Volume
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GaN monolithic integration for lighting and display
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2507699
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2019
◽
Author(s):
Hoi Wai Choi
◽
Wai Yuen Fu
◽
Kwai Hei Li
◽
Yuk Fai Cheung
Keyword(s):
Monolithic Integration
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Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2508154
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2019
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Author(s):
Michal Bockowski
◽
Izabella Grzegory
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Tomasz Sochacki
◽
Boleslaw Lucznik
◽
Michal Fijalkowski
◽
...
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Optimized design, growth, and operation of frequency-stabilised GaN laser diodes and GaN tapered amplifiers at 461 nm (Conference Presentation)
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2509713
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2019
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Author(s):
John Macarthur
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Ludwig Prade
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Christopher Carson
◽
Caspar C. Clark
◽
John Sharp
◽
...
Keyword(s):
Laser Diodes
◽
Optimized Design
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Structural investigation of InGaN/GaN heterostructures and quantum wells for long wavelength emission (Conference Presentation)
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2511132
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2019
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Author(s):
Pierre Ruterana
Keyword(s):
Quantum Wells
◽
Structural Investigation
◽
Long Wavelength
◽
Wavelength Emission
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Recent progress of Mg-ion implantation and thermal activation process for p-doping in GaN (Conference Presentation)
Gallium Nitride Materials and Devices XIV
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10.1117/12.2508417
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2019
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Author(s):
Hideki Sakurai
◽
Masato Omori
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Shinji Yamada
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Yukihiro Furukawa
◽
Hideo Suzuki
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...
Keyword(s):
Ion Implantation
◽
Thermal Activation
◽
Recent Progress
◽
Activation Process
◽
Thermal Activation Process
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Fabrication and characterization of high-voltage AlGaN/GaN HEMTs on silicon substrates (Conference Presentation)
Gallium Nitride Materials and Devices XIV
◽
10.1117/12.2510415
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2019
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Author(s):
Anna Szerling
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Marek Ekielski
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Maciej Kozubal
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Karolina Pagowska
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Andrzej Taube
◽
...
Keyword(s):
High Voltage
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Silicon Substrates
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Gan Hemts
◽
Fabrication And Characterization
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Sapphire nanomembrane technology for high-efficiency micro-LED displays (Conference Presentation)
Gallium Nitride Materials and Devices XIV
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10.1117/12.2511100
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2019
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Author(s):
Euijoon Yoon
Keyword(s):
High Efficiency
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Vertical GaN power devices: current status and future prospects (Conference Presentation)
Gallium Nitride Materials and Devices XIV
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10.1117/12.2509733
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2019
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Author(s):
Tetsu Kachi
Keyword(s):
Current Status
◽
Future Prospects
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Power Devices
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High-Q gallium nitride photonic crystal cavities on silicon (Conference Presentation)
Gallium Nitride Materials and Devices XIV
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10.1117/12.2509655
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2019
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Author(s):
Nicolas Grandjean
Keyword(s):
Gallium Nitride
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Photonic Crystal
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Photonic Crystal Cavities
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High Q
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