scholarly journals Understanding metal organic chemical vapour deposition of monolayer WS2: the enhancing role of Au substrate for simple organosulfur precursors

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22234-22244
Author(s):  
Ye Fan ◽  
Kenichi Nakanishi ◽  
Vlad P. Veigang-Radulescu ◽  
Ryo Mizuta ◽  
J. Callum Stewart ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Chemical Reactions ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Ws2 Monolayer

A deconstructed MOCVD model process allows in-operando fingerprinting of the chemical reactions that underpin WS2 monolayer crystal growth, and highlights the enhancing role of Au support in conjunction with simple organosulfide precursors.

The role of CH4 in metal organic chemical vapour deposition of GaAs

1986 ◽  
Vol 136 (2) ◽  
pp. 281-287 ◽  
Author(s):  
G. Arens ◽  
H. Lüth ◽  
M. Heyen ◽  
P. Balk
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal–organic chemical vapour deposition

1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pressure Data ◽  
Metal Organic
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