Infrared spectroscopic and X-ray diffraction characterization of iron disulphide thin films prepared by metal-organic chemical vapour deposition

1992 ◽  
Vol 11 (16) ◽  
pp. 1131-1133 ◽  
Author(s):  
A. Ennaoui ◽  
S. Schroetter ◽  
S. Fiechter ◽  
H. Tributsch
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Spectroscopic ◽  
Metal Organic

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition

2019 ◽  
Vol 683 ◽  
pp. 128-134 ◽  
Author(s):  
Adelaida Huerta-Barberà ◽  
Esther de Prado ◽  
Maria del Carmen Martínez-Tomás ◽  
Saïd Agouram ◽  
Elias Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
Rich Region ◽  
Metal Organic

scholarly journals Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

2015 ◽  
Vol 33 (4) ◽  
pp. 725-731 ◽  
Author(s):  
K.O. Oyedotun ◽  
E. Ajenifuja ◽  
B. Olofinjana ◽  
B.A. Taleatu ◽  
E. Omotoso ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Lithium Manganese Oxide ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Manganese ◽  
Metal Organic

AbstractLithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2) and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T) in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition

1994 ◽  
Vol 30 (15) ◽  
pp. 1252-1254 ◽  
Author(s):  
A.L. Holmes ◽  
F.J. Ciuba ◽  
K.G. Fertitta ◽  
R.D. Dupuis
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Metal Organic

scholarly journals Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

AIP Advances ◽  
2013 ◽  
Vol 3 (9) ◽  
pp. 092123 ◽  
Author(s):  
Kwang Hong Lee ◽  
Adam Jandl ◽  
Yew Heng Tan ◽  
Eugene A. Fitzgerald ◽  
Chuan Seng Tan
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Epitaxial Film ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic
Sign in / Sign up

Export Citation Format

Share Document