scholarly journals Band gap engineering of donor–acceptor co-crystals by complementary two-point hydrogen bonding

2020 ◽  
Vol 4 (12) ◽  
pp. 3669-3677
Author(s):  
Nathan Yee ◽  
Afshin Dadvand ◽  
Dmitrii F. Perepichka
Keyword(s):  
Hydrogen Bonding ◽  
Electrical Properties ◽  
Band Gap ◽  
Band Gap Engineering ◽  
Orbital Interactions ◽  
Quinone Acceptors ◽  
Donor Acceptor

Hydrogen bonding of diindolopyrrole donors with quinone acceptors enhances the orbital interactions and modulates the band gap and electrical properties of their complexes.

scholarly journals Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution

2019 ◽  
Vol 20 (2) ◽  
pp. 127-132
Author(s):  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
V.A. Romaka ◽  
A.M. Нoryn ◽  
L.P. Romaka ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electronic Structure ◽  
Electrical Properties ◽  
Band Gap ◽  
Electronic States ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Density Of Electronic States ◽  
Donor And Acceptor ◽  
Donor Acceptor

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.

Band Gap Engineering in Acceptor-Donor-Acceptor Boron Difluoride Formazanates

2021 ◽  
Author(s):  
Jasveer S. Dhindsa ◽  
Francis L. Buguis ◽  
Michael Anghel ◽  
Joe B. Gilroy
Keyword(s):  
Band Gap ◽  
Band Gap Engineering ◽  
Donor Acceptor ◽  
Boron Difluoride

Atomistic Band Gap Engineering in Donor–Acceptor Polymers

2011 ◽  
Vol 134 (1) ◽  
pp. 539-547 ◽  
Author(s):  
Gregory L. Gibson ◽  
Theresa M. McCormick ◽  
Dwight S. Seferos
Keyword(s):  
Band Gap ◽  
Band Gap Engineering ◽  
Donor Acceptor

Band Gap Engineering via Controlling Donor–Acceptor Compositions in Conjugated Copolymers

2013 ◽  
Vol 117 (2) ◽  
pp. 690-696 ◽  
Author(s):  
Ying-Chieh Hung ◽  
Chi-Yang Chao ◽  
Chi-An Dai ◽  
Wei-Fang Su ◽  
Shiang-Tai Lin
Keyword(s):  
Band Gap ◽  
Band Gap Engineering ◽  
Donor Acceptor ◽  
Conjugated Copolymers

Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO

2008 ◽  
Vol 93 (11) ◽  
pp. 112112 ◽  
Author(s):  
Xinman Chen ◽  
Kaibin Ruan ◽  
Guangheng Wu ◽  
Dinghua Bao
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Band Gap Engineering

Temperature-dependent study of GaAs1−x−y N x Bi y alloys for band-gap engineering: photoreflectance and k · p modeling

2020 ◽  
Vol 13 (9) ◽  
pp. 091005
Author(s):  
Wiktor Żuraw ◽  
Wojciech M. Linhart ◽  
Jordan Occena ◽  
Tim Jen ◽  
Jared. W. Mitchell ◽  
...  
Keyword(s):  
Band Gap ◽  
Temperature Dependent ◽  
Band Gap Engineering ◽  
Temperature Dependent Study
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