Formation of oxygen vacancies in Li2FeSiO4: first-principles calculations

2021 ◽  
Vol 23 (36) ◽  
pp. 20444-20452
Author(s):  
Lihong Zhang ◽  
Shunqing Wu ◽  
Jianwei Shuai ◽  
Zhufeng Hou ◽  
Zizhong Zhu

The oxygen vacancy (left panel) and the vacancy formation energy as a function of temperature and pressure (right panel).

1999 ◽  
Vol 59 (18) ◽  
pp. 11693-11703 ◽  
Author(s):  
P. A. Korzhavyi ◽  
I. A. Abrikosov ◽  
B. Johansson ◽  
A. V. Ruban ◽  
H. L. Skriver

2012 ◽  
Vol 11 (06) ◽  
pp. 1261-1280 ◽  
Author(s):  
HUANWEN WU ◽  
NING ZHANG ◽  
HONGMING WANG ◽  
SANGUO HONG

Geometric and electronic properties and vacancy formation energies for two kinds of oxygen-vacancy Cu 2 O (111) surfaces have been investigated by first-principles calculations. Results show that the relaxation happens mainly on the top three trilayers of surfaces. Two vacancies trap electrons of -0.11e and -0.27e, respectively. The effects of oxygen vacancies on the electronic structures are found rather localized. The electronic structures suggest that the oxygen vacancies enhance the electron donating ability of the surfaces to some extent. The energies of 1.75 and 1.43 eV for the formation of oxygen vacancies are rather low, which indicates the partially reduced surfaces are stable and easy to produce.


2014 ◽  
Vol 2 (43) ◽  
pp. 18329-18338 ◽  
Author(s):  
Mahasin Alam Sk ◽  
Sergey M. Kozlov ◽  
Kok Hwa Lim ◽  
Annapaola Migani ◽  
Konstantin M. Neyman

The corner Ce atoms are essential for a noticeable reduction of the oxygen vacancy formation energy, Ef(Ovac), in nanostructured CeO2.


2020 ◽  
Vol 124 (19) ◽  
pp. 10509-10522 ◽  
Author(s):  
Yoyo Hinuma ◽  
Takashi Kamachi ◽  
Nobutsugu Hamamoto ◽  
Motoshi Takao ◽  
Takashi Toyao ◽  
...  

2007 ◽  
Vol 127 (7) ◽  
pp. 074704 ◽  
Author(s):  
Zongxian Yang ◽  
Gaixia Luo ◽  
Zhansheng Lu ◽  
Kersti Hermansson

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