scholarly journals Large magnetodielectric response of PST/LSMO/LCMO film over a wide temperature range

RSC Advances ◽  
2021 ◽  
Vol 11 (22) ◽  
pp. 13175-13182
Author(s):  
Ying Chen ◽  
Fen Xue ◽  
Zhengyang Zhou ◽  
Genshui Wang ◽  
Wensheng Wang ◽  
...  

Pb0.6Sr0.4TiO3/La0.7Sr0.3MnO3/La0.7Ca0.3MnO3 (PST/LSMO/LCMO) film is grown on Si substrate by chemical solution deposition method.

1997 ◽  
Vol 36 (Part 1, No. 9B) ◽  
pp. 5930-5934 ◽  
Author(s):  
Wataru Sakamoto ◽  
Akihiro Kawase ◽  
Toshinobu Yogo ◽  
Shin-ichi Hirano

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.


RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 52353-52359 ◽  
Author(s):  
Yulong Bai ◽  
Jieyu Chen ◽  
Shifeng Zhao ◽  
Qingshan Lu

Bilayer composite heterostructural films consisting of magnetic CoFe2O4 and multiferroic Bi5Ti3FeO15 films were prepared by the chemical solution deposition method.


1999 ◽  
Vol 14 (10) ◽  
pp. 4004-4010 ◽  
Author(s):  
J. H. Kim ◽  
F. F. Lange

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on (001) LaAlO3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)PZT‖[100](001)LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.


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