scholarly journals Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.

2011 ◽  
Vol 98 (9) ◽  
pp. 093506 ◽  
Author(s):  
Mingzhi Dai ◽  
Guodong Wu ◽  
Yue Yang ◽  
Jie Jiang ◽  
Li Li ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).


2014 ◽  
Vol 35 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Ning Liu ◽  
Yanghui Liu ◽  
Liqiang Zhu ◽  
Yi Shi ◽  
Qing Wan

2011 ◽  
Vol 98 (15) ◽  
pp. 153501 ◽  
Author(s):  
Mingzhi Dai ◽  
Guodong Wu ◽  
Yue Yang ◽  
Jin Huang ◽  
Li Li ◽  
...  

2018 ◽  
Vol 67 (23) ◽  
pp. 237302
Author(s):  
Liang Ding-Kang ◽  
Chen Yi-Hao ◽  
Xu Wei ◽  
Ji Xin-Cun ◽  
Tong Yi ◽  
...  

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