scholarly journals Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Double Layer ◽  
Vapor Deposition ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Dual Gate ◽  
Layer Thin Film

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).

Low-Cost pH Sensors Based on Low-Voltage Oxide-Based Electric-Double-Layer Thin Film Transistors

2014 ◽  
Vol 35 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Ning Liu ◽  
Yanghui Liu ◽  
Liqiang Zhu ◽  
Yi Shi ◽  
Qing Wan
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Low Cost ◽  
Ph Sensors ◽  
Layer Thin Film

Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature

2011 ◽  
Vol 98 (9) ◽  
pp. 093506 ◽  
Author(s):  
Mingzhi Dai ◽  
Guodong Wu ◽  
Yue Yang ◽  
Jie Jiang ◽  
Li Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Low Voltage ◽  
Layer Thin Film

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Layer Thin Film

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.

Thin-film transistors deposited by hot-wire chemical vapor deposition

2003 ◽  
Vol 430 (1-2) ◽  
pp. 220-225 ◽  
Author(s):  
B. Stannowski ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire
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